TSM60NB190CZ C0G datasheet, PDF

TSM60NB190CZ C0G: DescriptionMOSFET N-CHANNEL 600V 18A TO220; Categorysemiconductor Discrete semiconductor; File Size777KB，8 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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TSM60NB190CZ C0G Overview

MOSFET N-CHANNEL 600V 18A TO220

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	600V
Current - Continuous Drain (Id) at 25°C	18A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	190 milliohms @ 6A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	31nC @ 10V
Vgs (maximum value)	±30V
Input capacitance (Ciss) at different Vds (maximum value)	1273pF @ 100V
FET function	-
Power dissipation (maximum)	33.8W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-220
Package/casing	TO-220-3

	TSM60NB190CZ C0G	TSM60NB190CI C0G
Description	MOSFET N-CHANNEL 600V 18A TO220	MOSFET N-CH 600V 18A ITO220
FET type	N channel	N channel
technology	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	600V	600V
Current - Continuous Drain (Id) at 25°C	18A（Tc）	18A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V	10V
Rds On (maximum value) when different Id, Vgs	190 milliohms @ 6A, 10V	190 milliohms @ 6A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	31nC @ 10V	31nC @ 10V
Vgs (maximum value)	±30V	±30V
Input capacitance (Ciss) at different Vds (maximum value)	1273pF @ 100V	1273pF @ 100V
Power dissipation (maximum)	33.8W（Tc）	33.8W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）
Installation type	Through hole	Through hole
Supplier device packaging	TO-220	ITO-220
Package/casing	TO-220-3	TO-220-3 fully encapsulated, isolation tab

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