HER606G B0G datasheet, PDF - EEWORLD Datasheet

HER606G B0G: DescriptionDIODE GEN PURP 600V 6A R-6; Categorysemiconductor Discrete semiconductor; File Size355KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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HER606G B0G Overview

DIODE GEN PURP 600V 6A R-6

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	600V
Current - average rectification (Io)	6A
Voltage at different If - Forward (Vf	1.7V @ 6A
speed	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	75ns
Current at different Vr - Reverse leakage current	10µA @ 600V
Capacitance at different Vr, F	65pF @ 4V，1MHz
Installation type	Through hole
Package/casing	R6, axial
Supplier device packaging	R-6
Operating Temperature - Junction	-55°C ~ 150°C

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