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H11AA3300

Description
OPTOISO 5.3KV TRANS W/BASE 6DIP
CategoryLED optoelectronic/LED   
File Size130KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

H11AA3300 Overview

OPTOISO 5.3KV TRANS W/BASE 6DIP

H11AA3300 Parametric

Parameter NameAttribute value
Number of channels1
Voltage - Isolation5300Vrms
Current transfer ratio (minimum value)50% @ 10mA
Current transfer ratio (maximum)-
Open/close time (typ.)-
Rise/Fall Time (Typical)-
input typeAC,DC
Output typetransistor with base
Voltage - Output (maximum)30V
Current - Output/Channel-
Voltage - Forward (Vf) (Typical)1.2V
Current - DC Forward (If)100mA
Vce saturation value (maximum value)400mV
Operating temperature-55°C ~ 100°C
Installation typeThrough hole
Package/casing6-DIP(0.300",7.62mm)
Supplier device packaging6-DIP
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1
DESCRIPTION
The H11AAX series consists of two gallium-arsenide infrared
emitting diodes connected in inverse parallel driving a single
silicon phototransistor output.
H11AA3
H11AA2
H11AA4
6
1
6
SCHEMATIC
FEATURES
Bi-polar emitter input
Built-in reverse polarity input protection
Underwriters Laboratory (UL) recognized
File #E90700
VDE approved
File #E94766 (ordering option ‘300’)
1
1
6 BASE
6
2
5 COLL
APPLICATIONS
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
1
3
4 EMITTER
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Derate Linearly From 25°C
EMITTER
Continuous Forward Current
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation
Derate above 25°C
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
I
F
(pk)
P
D
Device
All
All
All
All
All
All
All
Value
-55 to +150
-55 to +100
260 for 10 sec
350
4.6
100
±1.0
200
2.6
300
4.0
Units
°C
°C
°C
mW
mW/°C
mA
A
mW
mW/°C
mW
mW/°C
P
D
All
2001 Fairchild Semiconductor Corporation
DS300212
12/12/01
1 OF 7
www.fairchildsemi.com
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