934066432118 datasheet, PDF - EEWORLD Datasheet

934066432118: DescriptionMOSFET N-CH 40V 120A D2PAK; CategoryDiscrete semiconductor The transistor; File Size713KB，13 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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934066432118 Overview

MOSFET N-CH 40V 120A D2PAK

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant
Is Samacsys	N
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	801 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	120 A
Maximum drain-source on-resistance	0.0016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	1306 A
Guideline	AEC-Q101; IEC-60134
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	934066432118	BUK761R7-40E,118
Description	MOSFET N-CH 40V 120A D2PAK	MOSFET N-CH 40V 120A D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant	not_compliant
Is Samacsys	N	N
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	801 mJ	801 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V	40 V
Maximum drain current (ID)	120 A	120 A
Maximum drain-source on-resistance	0.0016 Ω	0.0016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	1306 A	1306 A
Guideline	AEC-Q101; IEC-60134	AEC-Q101; IEC-60134
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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