1N4004GP-TP datasheet, PDF - EEWORLD Datasheet

1N4004GP-TP: DescriptionDIODE GEN PURP 400V 1A DO41; Categorysemiconductor Discrete semiconductor; File Size439KB，4 Pages; ManufacturerMicro Commercial Co; Environmental Compliance

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DIODE GEN PURP 400V 1A DO41

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	400V
Current - average rectification (Io)	1A
Voltage at different If - Forward (Vf	1.1V @ 1A
speed	Standard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)	2µs
Current at different Vr - Reverse leakage current	5µA @ 400V
Capacitance at different Vr, F	15pF @ 4V，1MHz
Installation type	Through hole
Package/casing	DO-204AL, DO-41, axial
Supplier device packaging	DO-41
Operating Temperature - Junction	-55°C ~ 150°C

	1N4004GP-TP	1N4007GP-TP
Description	DIODE GEN PURP 400V 1A DO41	DIODE GEN PURP 1KV 1A DO41
Diode type	standard	standard
Voltage - DC Reverse (Vr) (Maximum)	400V	1000V
Current - average rectification (Io)	1A	1A
Voltage at different If - Forward (Vf	1.1V @ 1A	1.1V @ 1A
speed	Standard recovery >500ns, >200mA (Io)	Standard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)	2µs	2µs
Current at different Vr - Reverse leakage current	5µA @ 400V	5µA @ 1000V
Capacitance at different Vr, F	15pF @ 4V，1MHz	15pF @ 4V，1MHz
Installation type	Through hole	Through hole
Package/casing	DO-204AL, DO-41, axial	DO-204AL, DO-41, axial
Supplier device packaging	DO-41	DO-41
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C

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