TLP385
Photocouplers
GaAs Infrared LED & Photo Transistor
TLP385
1. Applications
•
•
•
Programmable Logic Controllers (PLCs)
AC Adapters
I/O Interface Boards
2. General
TLP385 is a photocoupler of high isolation type that consists of phototransistor optically coupled to gallium
arsenide infrared emitting diode in a 4-pin SO6L package.
TLP385 is guaranteed high isolation voltage (5000 Vrms).
Since TLP385 has a small and thin package compared with a standard DIP package, is it is suitable for high-
density surface mounting applications such as programmable controllers.
3. Features
(1)
(2)
(3)
(4)
(5)
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50 % (min)
GB Rank: 100 % (min)
Isolation voltage: 5000 Vrms (min)
Operating temperature: -55 to 110
Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065, EN60950-1, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898
Note 1: When a VDE approved type is needed, please designate the Option (D4)
(D4).
Start of commercial production
©2016 Toshiba Corporation
1
2014-08
2016-03-16
Rev.5.0
TLP385
4. Packaging and Pin Assignment
1: Anode
3: Cathode
4: Emitter
6: Collector
11-4P1A
5. Principle of Operation
5.1. Mechanical Parameters
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min
8.0
8.0
0.4
Unit
mm
©2016 Toshiba Corporation
2
2016-03-16
Rev.5.0
TLP385
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input power dissipation
Input power dissipation
derating
Input reverse voltage
Junction temperature
Detector Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Collector power dissipation
derating
Junction temperature
Common Operating temperature
Storage temperature
Lead soldering temperature
Total power dissipation
Total power dissipation
derating
Isolation voltage
(T
a
≥
25
)
AC, 60 s, R.H.
≤
60 %
(10 s)
(T
a
≥
25
)
(T
a
≥
90
)
(T
a
≥
90
)
Symbol
I
F
∆I
F
/∆T
a
I
FP
P
D
∆P
D
/∆T
a
V
R
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/∆T
a
T
j
T
opr
T
stg
T
sol
P
T
∆P
T
/∆T
a
BV
S
(Note 2)
(Note 1)
Note
Rating
50
-1.43
1
100
-2.86
5
125
80
7
50
150
-1.5
125
-55 to 110
-55 to 125
260
200
-2.0
5000
mW
mW/
Vrms
mA
mW
mW/
Unit
mA
mA/
A
mW
mW/
V
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
0.1 ms, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
Note:
7. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward voltage
Input reverse current
Input capacitance
Detector Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Dark Current
Collector-emitter capacitance
Symbol
V
F
I
R
C
t
V
(BR)CEO
V
(BR)ECO
I
DARK
C
CE
Note
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, T
a
= 85
V = 0 V, f = 1 MHz
Min
1.1
80
7
Typ.
1.25
30
0.01
2
10
Max
1.4
5
0.08
50
pF
µA
Unit
V
µA
pF
V
©2016 Toshiba Corporation
3
2016-03-16
Rev.5.0
TLP385
8. Coupled Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Current transfer ratio
Saturated current transfer ratio
Symbol
I
C
/I
F
I
C
/I
F(sat)
Note
Test Condition
Min
50
100
30
Typ.
60
0.13
Max
600
600
0.3
0.3
10
µA
V
Unit
%
(Note 1) I
F
= 5 mA, V
CE
= 5 V
I
F
= 5 mA, V
CE
= 5 V, Rank GB
I
F
= 1 mA, V
CE
= 0.3 V
I
F
= 1 mA, V
CE
= 0.3 V, Rank GB
Collector-emitter saturation voltage V
CE(sat)
I
F
= 8 mA, I
C
= 2.4 mA
I
F
= 1 mA, I
C
= 0.2 mA
I
F
= 1 mA, I
C
= 0.2 mA, Rank GB
OFF-state collector current
I
C(off)
V
F
= 0.7 V, V
CE
= 48 V
Note 1: See Table 8.1 for current transfer ratio.
Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T
a
= 25
)
Rank
Blank
Y
GR
GB
YH
GRL
GRH
BL
BLL
Test Condition
I
F
= 5 mA, V
CE
= 5 V
Current transfer ratio
I
C
/I
F
Min
50
50
100
100
75
100
150
200
200
Current transfer ratio
I
C
/I
F
Max
600
150
300
600
150
200
300
600
400
Marking of classification
Blank, YE, GR, GB, Y+,
G, G+, BL, B
YE
GR
GB
Y+
G
G+
BL
B
Unit
%
Note:
Specify both the part number and a rank in this format when ordering.
Example: TLP385(GB,E
For safety standard certification, however, specify the part number alone.
Example: TLP385(GB,E: TLP385
9. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
5000
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, RH
≤
60 %
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
©2016 Toshiba Corporation
4
2016-03-16
Rev.5.0
TLP385
10. Switching Characteristics (Unless otherwise specified,T
a
= 25
)
Characteristics
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
on
t
off
t
on
t
s
t
off
See Fig. 10.1
R
L
= 1.9 kΩ, V
CC
= 5 V,
I
F
= 16 mA
Note
Test Condition
V
CC
= 10 V, I
C
= 2 mA,
R
L
= 100
Ω
Min
Typ.
2
3
3
3
0.5
25
40
Max
Unit
µs
Fig. 10.1 Switching Time Test Circuit
©2016 Toshiba Corporation
5
2016-03-16
Rev.5.0
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