Ordering number : EN6134B
5HP01M
SANYO Semiconductors
DATA SHEET
5HP01M
Features
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Ultrahigh-speed switching
4V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
--50
±20
--0.07
--0.28
0.15
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Package Dimensions
unit : mm (typ)
7023A-010
2.0
3
0.15
Product & Package Information
• Package
: MCP
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
5HP01M-TL-E
5HP01M-TL-H
0.425
Packing Type: TL
Marking
LOT No.
1.25
2.1
0 to 0.08
0.2
0.425
1
0.65
2
0.3
XC
TL
LOT No.
Electrical Connection
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
1
3
0.9
0.3
2
http://semicon.sanyo.com/en/network
71112 TKIM/33006PE MSIM TB-00002182/72600 TSIM TA-1969 No.6134-1/7
5HP01M
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS= --70mA, VGS=0V
VDS= --10V, VGS= --10V, ID= --70mA
See specified Test Circuit.
VDS= --10V, f=1MHz
Conditions
ID= --1mA, VGS=0V
VDS= --50V, VGS=0V
VGS=±16V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --40mA
ID= --40mA, VGS= --10V
ID= --20mA, VGS= --4V
-
-1
50
70
17
23
6.2
4.0
1.3
13
10
100
150
1.32
0.17
0.34
--0.85
--1.2
22
32
Ratings
min
--50
--1
±10
--2.5
typ
max
Unit
V
μA
μA
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
0V
--10V
VIN
VIN
VDD= --25V
ID= --40mA
RL=625Ω
VOUT
PW=10μs
D.C.≤1%
D
G
5HP01M
P.G
50Ω
S
Ordering Information
Device
5HP01M-TL-E
5HP01M-TL-H
Package
MCP
MCP
Shipping
3,000pcs./reel
3,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
No.6134-2/7
5HP01M
--0.07
ID -- VDS
--8
.0V
--0.14
ID -- VGS
Ta=
--25
°
C
VDS= --10V
25
°
C
--5
--6
.0
V
--0.06
--0.12
Drain Current, ID -- A
--1
0.0
V
Drain Current, ID -- A
--0.05
.0
--4
V
--0.10
--0.04
--0.08
--0.03
--0.06
--3.0V
--0.02
--0.04
--0.01
0
0
--0.2
--0.4 --0.6
--0.8
--1.0
--1.2
--1.4
VGS= --2.5V
--1.6
--1.8
--2.0
--0.02
0
0
--1
--2
--3
--4
--6
IT00104
Drain-to-Source Voltage, VDS -- V
50
IT00103
100
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
RDS(on) -- ID
VGS= --10V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
45
40
35
30
25
7
5
3
--40mA
ID= --20mA
Ta=75
°
C
2
20
15
10
--2
25
°
C
--25
°
C
--3
--4
--5
--6
--7
--8
--9
--10
10
--0.01
2
3
5
7
75
°
C
--0.1
2
3
Gate-to-Source Voltage, VGS -- V
1000
7
IT00105
40
35
30
25
20
15
10
5
0
--60
RDS(on) -- ID
VGS= --4V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Drain Current, ID -- A
IT00106
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
3
2
25
°
C
100
7
5
3
2
V
--4
S=
, VG
10V
mA
0
= --
--2
S
=
, VG
ID
mA
--40
I D=
Ta=75
°
C
--25
°
C
10
--0.01
2
3
5
7
--0.1
2
3
--40
--20
0
20
40
60
80
100
120
140
160
Drain Current, ID -- A
1.0
|
y
fs
|
-- ID
IT00107
3
Ambient Temperature, Ta --
°
C
IT00108
IS -- VSD
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
VDS= --10V
2
Source Current, IS -- A
3
2
--0.1
7
5
0.1
7
5
3
2
25
°
C
Ta= --
25
°
C
75
°
C
3
Ta=7
5
°
C
25
°
C
2
0.01
--0.01
2
3
5
7
--0.1
2
3
--0.01
--0.5
--0.6
--0.7
--0.8
--25
°
C
--0.9
--1.0
--1.1
--1.2
Drain Current, ID -- A
IT00109
Diode Forward Voltage, VSD -- V
IT00110
No.6134-3/7
5HP01M
1000
7
5
SW Time -- ID
VDD= --25V
VGS= --10V
tf
Ciss, Coss, Crss -- pF
td(off)
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time -- ns
3
2
100
7
5
3
2
10
7
5
3
2
1.0
--0.01
2
Ciss
Coss
Crss
td(on)
tr
3
5
7
Drain Current, ID -- A
--10
--9
--0.1
IT00111
0.20
0
--5
--10
--15
--20
--25
--30
--35
--40
--45
--50
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT00112
PD -- Ta
--8
--7
--6
--5
--4
--3
--2
--1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Allowable Power Dissipation, PD -- W
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --0.07A
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Total Gate Charge, Qg -- nC
IT00113
Ambient Temperature, Ta --
°
C
IT02381
No.6134-4/7
5HP01M
Embossed Taping Specification
5HP01M-TL-E, 5HP01M-TL-H
No.6134-5/7
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