EEWORLDEEWORLDEEWORLD

Part Number

Search

IPP60R125CFD7XKSA1

Description
HIGH POWER_NEW
CategoryDiscrete semiconductor    The transistor   
File Size224KB,2 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IPP60R125CFD7XKSA1 Online Shopping

Suppliers Part Number Price MOQ In stock  
IPP60R125CFD7XKSA1 - - View Buy Now

IPP60R125CFD7XKSA1 Overview

HIGH POWER_NEW

IPP60R125CFD7XKSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Factory Lead Time18 weeks
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Product Brief
600 V CoolMOS™ CFD7 SJ MOSFET
Infineon’s answer to resonant high power topologies
The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET tech-
nology with integrated fast body diode, completing the CoolMOS™ 7 series. It is the ideal
choice for resonant topologies in high power SMPS applications, such as server, telecom
and EV charging stations.
The new CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 family. CoolMOS™ CFD7
comes with reduced gate charge (Q
g
), improved turn-off behavior and a reverse recovery
charge (Q
rr
) of up to 69 percent lower compared to the competition, as well as the lowest
reverse recovery time (t
rr
) in the market. Due to these features CoolMOS™ CFD7 offers
highest efficiency and best-in-class reliability in soft switching topologies such as LLC and
ZVS phase-shift full-bridge. In addition, CoolMOS™ CFD7 enables higher power density
thanks to its optimized R
DS(on)
.
All together, this latest fast body diode series brings clear benefits compared to competitor
offerings by combining the advantages of a fast switching technology with superior commuta-
tion ruggedness without sacrificing easy implementation in the design-in process.
Q
rr
comparison
comparison of 170 m CFD vs. 190 m range competition*
Q
rr
of 170 mΩ CFD vs. 190 mΩ range competition*
1200
1000
-69 %
800
Q
rr
[nC]
World‘s best Q
rr
got even better!
Key features
Ultra-fast body diode
Best-in-class reverse recovery
charge (Q
rr
)
Improved reverse diode dv/dt and
dif/dt ruggedness
Lowest FOM R
DS(on)
x Q
g
and E
oss
Best-in-class R
DS(on)
/package
combinations
Key benefits
Best-in-class hard commutation
ruggedness
Highest reliability for resonant
topologies
Highest efficiency with outstanding
ease-of-use/performance trade-off
Enabling increased power density
solutions
600
400
200
0
Comp. C
Comp. A
Comp. D
Comp. B
CFD2
CFD7
-32 %
*Comparison based
based on datasheet values
*Comparison
on datasheet values
www.infineon.com/cfd7

IPP60R125CFD7XKSA1 Related Products

IPP60R125CFD7XKSA1 IPW60R055CFD7XKSA1 IPW60R040CFD7XKSA1 IPW60R125CFD7XKSA1 IPP60R090CFD7XKSA1 IPW60R090CFD7XKSA1
Description HIGH POWER_NEW HIGH POWER_NEW HIGH POWER_NEW HIGH POWER_NEW HIGH POWER_NEW HIGH POWER_NEW
Is it Rohs certified? conform to - conform to conform to conform to conform to
Reach Compliance Code compliant - compliant compliant compliant compliant
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 - 1 1 1 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号