PBLS4005Y,115 datasheet, PDF - EEWORLD Datasheet

PBLS4005Y,115: DescriptionTRANS NPN PREBIAS/PNP 6TSSOP; CategoryDiscrete semiconductor The transistor; File Size215KB，12 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com

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PBLS4005Y,115 Overview

TRANS NPN PREBIAS/PNP 6TSSOP

Parameter Name	Attribute value
Brand Name	Nexperia
Maker	Nexperia
Parts packaging code	TSSOP
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Manufacturer packaging code	SOT363
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN AND PNP
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

	PBLS4005Y,115
Description	TRANS NPN PREBIAS/PNP 6TSSOP
Brand Name	Nexperia
Maker	Nexperia
Parts packaging code	TSSOP
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Manufacturer packaging code	SOT363
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN AND PNP
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

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