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IKQ75N120CT2XKSA1

Description
IGBT 1200V 150A TO247-3-46
CategoryDiscrete semiconductor    The transistor   
File Size2MB,16 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IKQ75N120CT2XKSA1 Overview

IGBT 1200V 150A TO247-3-46

IKQ75N120CT2XKSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)150 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)563 ns
Nominal on time (ton)85 ns
IKQ75N120CT2
TRENCHSTOP
TM
2lowV
ce(sat)
secondgenerationIGBT
LowV
ce(sat)
IGBTinTRENCHSTOP™2technologycopackedwithsoft,fast
recoveryfullcurrentratedanti-parallelEmitterControlledDiode

Features:
TRENCHSTOP™2technologyoffers:
•VerylowV
CE(sat)
,1.75Vatnominalcurrent
•10µsecshortcircuitwithstandtimeatT
vj
=175°C
•Easyparallelingcapabilityduetopositivetemperature
coefficientinV
CE(sat)
•LowEMI
•Verysoft,fastrecoveryfullcurrentanti-paralleldiode
•Maximumjunctiontemperature175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt
Applications:
•GPD(GeneralPurposeDrives)
•ServoDrives
•CommercialVehicles
•AgriculturalVehicles
•Three-levelSolarStringInverter
•Welding
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
C
G
E
KeyPerformanceandPackageParameters
Type
IKQ75N120CT2
V
CE
1200V
I
C
75A
V
CEsat
,T
vj
=25°C
1.75V
T
vjmax
175°C
Marking
K75MCT2
Package
PG-TO247-3-46
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.2
2017-05-02

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Description IGBT 1200V 150A TO247-3-46 Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.
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