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1N5406GP-TP

Description
DIODE GEN PURP 600V 3A DO201AD
Categorysemiconductor    Discrete semiconductor   
File Size445KB,4 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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1N5406GP-TP Overview

DIODE GEN PURP 600V 3A DO201AD

1N5406GP-TP Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io)3A
Voltage at different If - Forward (Vf1.1V @ 3A
speedStandard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current5µA @ 600V
Capacitance at different Vr, F40pF @ 4V,1MHz
Installation typeThrough hole
Package/casingDO-201AD, axial
Supplier device packagingDO-201AD
Operating Temperature - Junction-55°C ~ 150°C
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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1N5400GP
THRU
1N5408GP
3 Amp Glass
Passivated Rectifier
50 - 1000 Volts
DO-201AD
Features
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
High Current Capability and Low Current Leakage
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Glass Passivated Junction
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 30
°C/W
Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
1N5400GP
1N5401GP
1N5402GP
1N5404GP
1N5406GP
1N5407GP
1N5408GP
1N5400GP
1N5401GP
1N5402GP
1N5404GP
1N5406GP
1N5407GP
1N5408GP
35V
70V
140V
280V
420V
560V
700V
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
3.0A
200A
T
A
= 105°C
8.3ms, half sine
C
DIMENSIONS
V
F
1.1V
I
FM
= 3.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 125°C
Measured at
1.0MHz, V
R
=4.0V
I
R
5.0µA
50µA
40pF
DIM
A
B
C
D
INCHES
MIN
.287
.189
.048
1.000
MAX
.374
.208
.052
---
MM
MIN
7.30
4.80
1.20
25.40
MAX
9.50
5.30
1.30
---
NOTE
C
J
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Revision: B
www.mccsemi.com
1 of 4
2013/01/01

1N5406GP-TP Related Products

1N5406GP-TP 1N5400GP-TP 1N5401GP-TP 1N5402GP-TP 1N5404GP-TP 1N5407GP-TP 1N5408GP-TP
Description DIODE GEN PURP 600V 3A DO201AD DIODE GEN PURP 50V 3A DO201AD DIODE GEN PURP 100V 3A DO201AD DIODE GEN PURP 200V 3A DO201AD DIODE GEN PURP 400V 3A DO201AD DIODE GEN PURP 800V 3A DO201AD DIODE GEN PURP 1KV 3A DO201AD
Diode type standard standard standard standard standard standard standard
Voltage - DC Reverse (Vr) (Maximum) 600V 50V 100V 200V 400V 800V 1000V
Current - average rectification (Io) 3A 3A 3A 3A 3A 3A 3A
Voltage at different If - Forward (Vf 1.1V @ 3A 1.1V @ 3A 1.1V @ 3A 1.1V @ 3A 1.1V @ 3A 1.1V @ 3A 1.1V @ 3A
speed Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current 5µA @ 600V 5µA @ 50V 5µA @ 100V 5µA @ 200V 5µA @ 400V 5µA @ 800V 5µA @ 1000V
Capacitance at different Vr, F 40pF @ 4V,1MHz 40pF @ 4V,1MHz 40pF @ 4V,1MHz 40pF @ 4V,1MHz 40pF @ 4V,1MHz 40pF @ 4V,1MHz 40pF @ 4V,1MHz
Installation type Through hole Through hole Through hole Through hole Through hole Through hole Through hole
Package/casing DO-201AD, axial DO-201AD, axial DO-201AD, axial DO-201AD, axial DO-201AD, axial DO-201AD, axial DO-201AD, axial
Supplier device packaging DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
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