BYG24D, BYG24G, BYG24J
www.vishay.com
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Soft recovery characteristics
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMA
(DO-214AC)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
t
rr
E
R
T
J
max.
Package
Diode variation
1.5 A
200 V, 400 V, 600 V
30 A
1.0 μA
1.25 V
140 ns
20 mJ
150 °C
SMA (DO-214AC)
Single
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current at T
A
= 65 °C
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG24D
BYG24D
200
BYG24G
BYG24G
400
1.5
30
20
-55 to +150
BYG24J
BYG24J
600
V
A
A
mJ
°C
UNIT
Revision: 27-Apr-17
Document Number: 89475
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG24D, BYG24G, BYG24J
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Minimum breakdown voltage
Maximum instantaneous
forward voltage
Maximum reverse current
Maximum reverse recovery time
TEST CONDITIONS
I
R
= 100 μA
I
F
= 1 A
I
F
= 1.5 A
V
R
= V
RRM
T
J
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
SYMBOL
V
BR
V
F (1)
BYG24D
200
BYG24G
400
1.15
1.25
1
10
140
BYG24J
600
UNIT
V
V
I
R
t
rr
µA
ns
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Junction to case
Maximum thermal resistance, junction to ambient
SYMBOL
R
θJC
R
θJA
(1)
R
θJA
(2)
BYG24D
BYG24G
25
150
125
BYG24J
UNIT
°C/W
°C/W
Notes
Mounted on epoxy-glass hard tissue 35 μm x 17 mm
2
cooper area per electrode
(2)
Mounted on epoxy-glass hard tissue 35 μm x 50 mm
2
cooper area per electrode
(1)
ORDERING INFORMATION
(Example)
PREFERRED P/N
BYG24D-M3/TR
BYG24D-M3/TR3
BYG24DHM3_A/H
(1)
BYG24DHM3_A/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
TR
TR3
H
I
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
60
100
R
θJA
=
125 K/W
155 K/W
175 K/W
30
V
R
=
V
RRM
V
R
=
V
RRM
P
R
- Limit
at 100 %
V
R
Reverse Power Dissipation (mW)
50
40
Reverse Current (µA)
10
20
10
P
R
- Limit
at
80
%
V
R
1
25
50
75
100
125
150
25
50
75
100
125
150
0
Junction Temperature (°C)
Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Revision: 27-Apr-17
Document Number: 89475
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG24D, BYG24G, BYG24J
www.vishay.com
Vishay General Semiconductor
30
f = 1 MHz
25
100
Forward Current (A)
10
T
J
= 150 °C
Diode Capacitance (pF)
20
1
T
J
= 25 °C
15
10
0.1
5
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.1
1
10
100
Forward
Voltage
(V)
Reverse
Voltage
(V)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1.8
1.6
V
R
=
V
RRM
Half Sine-Wave
R
θJA
= 25 K/W
Average Forward Current (A)
1.4
1.2
1.0
R
θJA
= 125 K/W
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
140
160
R
θJA
= 150 K/W
Ambient Temperature (°C)
Fig. 4 - Average Forward Current vs. Ambient Temperature
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMA
(DO-214AC)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 27-Apr-17
Document Number: 89475
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000