PHB108NQ03LT,118 datasheet, PDF

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PHB108NQ03LT,118: DescriptionMOSFET N-CH 25V 75A D2PAK; CategoryDiscrete semiconductor The transistor; File Size102KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PHB108NQ03LT,118 Overview

MOSFET N-CH 25V 75A D2PAK

PHB108NQ03LT,118 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	D2PAK
package instruction	PLASTIC, D2PAK-3
Contacts	3
Manufacturer packaging code	SOT404
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	180 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.0075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

PHB108NQ03LT,118 Related Products

	PHB108NQ03LT,118	PHU108NQ03LT,127	PHD108NQ03LT,118
Description	MOSFET N-CH 25V 75A D2PAK	MOSFET N-CH 25V 75A SOT533	MOSFET N-CH 25V 75A DPAK
Brand Name	NXP Semiconductor	NXP Semiconductor	NXP Semiconductor
Is it Rohs certified?	conform to	conform to	conform to
Maker	NXP	NXP	NXP
Parts packaging code	D2PAK	TO-251	DPAK
package instruction	PLASTIC, D2PAK-3	IN-LINE, R-PSIP-T3	PLASTIC, SC-63, TO-252, DPAK-3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	180 mJ	180 mJ	180 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V	25 V	25 V
Maximum drain current (ID)	75 A	75 A	75 A
Maximum drain-source on-resistance	0.0075 Ω	0.0075 Ω	0.0075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2
Number of components	1	1	1
Number of terminals	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A	240 A	240 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES
Terminal form	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Manufacturer packaging code	SOT404	-	SOT428
JESD-609 code	e3	-	e3
Humidity sensitivity level	1	-	1
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Terminal surface	TIN	-	TIN
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
Maximum drain current (Abs) (ID)	-	75 A	75 A
JEDEC-95 code	-	TO-251	TO-252AA
Maximum operating temperature	-	175 °C	175 °C
Maximum power dissipation(Abs)	-	187 W	187 W

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