PBSS8110AS,126 datasheet, PDF - EEWORLD Datasheet

PBSS8110AS,126: DescriptionTRANS NPN 100V 1A TO92; CategoryDiscrete semiconductor The transistor; File Size121KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBSS8110AS,126 Overview

TRANS NPN 100V 1A TO92

Parameter Name	Attribute value
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Maker	NXP
Reach Compliance Code	compliant
Maximum collector current (IC)	1 A
Configuration	Single
Minimum DC current gain (hFE)	80
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.83 W
surface mount	NO
Nominal transition frequency (fT)	100 MHz

DISCRETE SEMICONDUCTORS

DATA SHEET

dbook, halfpage

M3D186

PBSS8110AS

100 V, 1 A

NPN low V

CEsat

(BISS) transistor

Product data sheet

Supersedes data of 2003 Dec 03

2004 Aug 10

	PBSS8110AS,126	PBSS8110AS126	PBSS8110AS
Description	TRANS NPN 100V 1A TO92	Bipolar Transistors - BJT TRANS BISS AMMO LARGE	TRANSISTOR 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
Configuration	Single	Single	SINGLE
Is it Rohs certified?	conform to	-	conform to
Maker	NXP	-	NXP
Reach Compliance Code	compliant	-	unknown
Maximum collector current (IC)	1 A	-	1 A
Minimum DC current gain (hFE)	80	-	150
Maximum operating temperature	150 °C	-	150 °C
Polarity/channel type	NPN	-	NPN
Maximum power dissipation(Abs)	0.83 W	-	0.83 W
surface mount	NO	-	NO
Nominal transition frequency (fT)	100 MHz	-	100 MHz

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