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AT49BV322A-70TI

Description
IC FLASH 32M PARALLEL 48TSOP
Categorystorage   
File Size488KB,32 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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AT49BV322A-70TI Overview

IC FLASH 32M PARALLEL 48TSOP

AT49BV322A-70TI Parametric

Parameter NameAttribute value
memory typenon-volatile
memory formatflash memory
technologyFLASH
storage32Mb (4M x 8,2M x 16)
Write cycle time - words, pages200µs
interview time70ns
memory interfacein parallel
Voltage - Power2.65 V ~ 3.6 V
Operating temperature-40°C ~ 85°C(TC)
Installation typesurface mount
Package/casing48-TFSOP (0.724", 18.40mm wide)
Supplier device packaging48-TSOP
Features
Single Voltage Read/Write Operation: 2.65V to 3.6V
Access Time – 70 ns
Sector Erase Architecture
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 12 µs
Fast Sector Erase Time – 300 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
– 12 mA Active
– 13 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
Green (Pb/Halide-free) Packaging Option
32-megabit
(2M x 16/4M x 8)
3-volt Only
Flash Memory
AT49BV322A
AT49BV322AT
1. Description
The AT49BV322A(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152
words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on
I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec-
tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball
CBGA package. The device has CE and OE control signals to avoid any bus conten-
tion. This device can be read or reprogrammed using a single power supply, making it
ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see
“Sector Lockdown” on page 7).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
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