R1LV3216RSD-7SI#B0 datasheet, PDF

R1LV3216RSD-7SI#B0: DescriptionIC SRAM 32M PARALLEL 52TSOP II; Categorystorage storage; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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R1LV3216RSD-7SI#B0 Overview

IC SRAM 32M PARALLEL 52TSOP II

Parameter Name	Attribute value
Brand Name	Renesas
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Parts packaging code	TSOP(2)
package instruction	8.89 X 10.79 MM, 0.40 MM PITCH, ROHS COMPLIANT, PLASTIC, TSOP2-52
Contacts	52
Manufacturer packaging code	PTSB0052LB-A52
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Factory Lead Time	1 week
Samacsys Description	SRAM- 32Mbit
Maximum access time	70 ns
Spare memory width	8
I/O type	COMMON
JESD-30 code	R-PDSO-G52
length	10.79 mm
memory density	33554432 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	52
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP52,.4,16
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.000012 A
Minimum standby current	2 V
Maximum slew rate	0.055 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.4 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8.89 mm

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