FDI045N10A datasheet, PDF - EEWORLD Datasheet

FDI045N10A: DescriptionMOSFET N-CH 100V 120A I2PAK-3; Categorysemiconductor Discrete semiconductor; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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FDI045N10A Overview

MOSFET N-CH 100V 120A I2PAK-3

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	120A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	4.5 milliohms @ 100A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	74nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	5270pF @ 50V
FET function	-
Power dissipation (maximum)	263W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	Through hole
Supplier device packaging	I2PAK（TO-262）
Package/casing	TO-262-3, long lead, I²Pak, TO-262AA

	FDI045N10A	FDI045N10A-F102	FDP045N10A
Description	MOSFET N-CH 100V 120A I2PAK-3	MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm	MOSFET N-CH 100V 120A TO-220-3
FET type	N channel	-	N channel
technology	MOSFET (metal oxide)	-	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V	-	100V
Current - Continuous Drain (Id) at 25°C	120A（Tc）	-	120A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V	-	10V
Rds On (maximum value) when different Id, Vgs	4.5 milliohms @ 100A, 10V	-	4.5 milliohms @ 100A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA	-	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	74nC @ 10V	-	74nC @ 10V
Vgs (maximum value)	±20V	-	±20V
Input capacitance (Ciss) at different Vds (maximum value)	5270pF @ 50V	-	5270pF @ 50V
Power dissipation (maximum)	263W（Tc）	-	263W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）	-	-55°C ~ 175°C（TJ）
Installation type	Through hole	-	Through hole
Supplier device packaging	I2PAK（TO-262）	-	TO-220-3
Package/casing	TO-262-3, long lead, I²Pak, TO-262AA	-	TO-220-3

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