FDI045N10A-F102 datasheet, PDF

FDI045N10A-F102: DescriptionMOSFET N-Channel PwrTrench 100V 164A 4.5mOhm; CategoryDiscrete semiconductor The transistor; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
package instruction	,
Manufacturer packaging code	418AV
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	120 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	263 W
surface mount	NO
Base Number Matches	1

	FDI045N10A-F102	FDI045N10A	FDP045N10A
Description	MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm	MOSFET N-CH 100V 120A I2PAK-3	MOSFET N-CH 100V 120A TO-220-3
FET type	-	N channel	N channel
technology	-	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	-	100V	100V
Current - Continuous Drain (Id) at 25°C	-	120A（Tc）	120A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	-	10V	10V
Rds On (maximum value) when different Id, Vgs	-	4.5 milliohms @ 100A, 10V	4.5 milliohms @ 100A, 10V
Vgs (th) (maximum value) when different Id	-	4V @ 250µA	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	-	74nC @ 10V	74nC @ 10V
Vgs (maximum value)	-	±20V	±20V
Input capacitance (Ciss) at different Vds (maximum value)	-	5270pF @ 50V	5270pF @ 50V
Power dissipation (maximum)	-	263W（Tc）	263W（Tc）
Operating temperature	-	-55°C ~ 175°C（TJ）	-55°C ~ 175°C（TJ）
Installation type	-	Through hole	Through hole
Supplier device packaging	-	I2PAK（TO-262）	TO-220-3
Package/casing	-	TO-262-3, long lead, I²Pak, TO-262AA	TO-220-3

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