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AO4772

Description
MOSFET N-CH 30V 6A 8SOIC
Categorysemiconductor    Discrete semiconductor   
File Size286KB,6 Pages
ManufacturerAOS
Websitehttp://www.aosmd.com
Environmental Compliance
Download Datasheet Parametric View All

AO4772 Overview

MOSFET N-CH 30V 6A 8SOIC

AO4772 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C6A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs30 milliohms @ 6A, 10V
Vgs (th) (maximum value) when different Id2.4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)6.3nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)310pF @ 15V
FET functionSchottky diode (isolated)
Power dissipation (maximum)2W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packaging8-SOIC
Package/casing8-SOIC (0.154", 3.90mm wide)
AO4772
30V N-Channel MOSFET
General Description
AO4772 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch,or for "standard buck" DC-DC conversion
applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
6A
< 30mΩ
< 42mΩ
Schottky
V
KA
I
F
V
F
(at I
F
=1A)
100% UIS Tested
100% R
g
Tested
30V
4A
<0.45V
SOIC-8
Top View
Bottom View
Top View
A
A
S
G
K
K
D
D
A
Pin1
K
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
MOSFET
Parameter
Symbol
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Schottky
Units
V
V
A
A
mJ
V
GS
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
V
KA
I
F
P
D
T
J
, T
STG
±20
6
5
30
10
5
30
4
3
2
1.3
-55 to 150
2
1.3
-55 to 150
Avalanche energy L=0.1mH
Schottky reverse voltage
C
Continuous Forward T
A
=25°
Current
Power Dissipation
B
V
A
W
°
C
T
A
=70°
C
C
T
A
=25°
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter: MOSFET
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Parameter: Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
R
θJA
R
θJL
Typ
48
74
32
48
74
31
Max
62.5
90
40
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
t
10s
Steady-State
Steady-State
Rev 1: Mar. 2011
www.aosmd.com
Page 1 of 6

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