MOSFET N-CH 30V 25A POWER56
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) at 25°C | 25A（Ta），40A（Tc） |
| Drive voltage (maximum Rds On, minimum Rds On) | 4.5V，10V |
| Rds On (maximum value) when different Id, Vgs | 2.4 milliohms @ 25A, 10V |
| Vgs (th) (maximum value) when different Id | 2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum value) | 113nC @ 10V |
| Vgs (maximum value) | ±20V |
| Input capacitance (Ciss) at different Vds (maximum value) | 4345pF @ 15V |
| FET function | - |
| Power dissipation (maximum) | 2.5W（Ta），83W（Tc） |
| Operating temperature | -55°C ~ 150°C（TJ） |
| Installation type | surface mount |
| Supplier device packaging | 8-PQFN（5x6） |
| Package/casing | 8-PowerTDFN |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
