EEWORLDEEWORLDEEWORLD

Part Number

Search

CMH08A(TE12L,Q,M)

Description
DIODE GEN PURP 400V 2A MFLAT
CategoryDiscrete semiconductor    diode   
File Size204KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

CMH08A(TE12L,Q,M) Overview

DIODE GEN PURP 400V 2A MFLAT

CMH08A(TE12L,Q,M) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.8 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current20 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage400 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL
CMH08A
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH08A
Switching Mode Power Supply Applications
Repetitive peak reverse voltage: V
RRM
= 400 V
Average forward current: I
F (AV)
= 2.0 A
Low forward voltage: V
FM
=1.8 V(Max.)
Very Fast Reverse-Recovery Time: trr =35ns(Max.)
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
400
2.0 (Note 1)
20 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Note 1: Tℓ=99°C Device mounted on a seramic board
board size: 50 mm
×
50 mm
soldering land: 2 mm
×2
mm
board thickness:0.64t
JEDEC
JEITA
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-4E1A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.023 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
Peak repetitive reverse current
Reverse recovery time
Forward recovery time
V
FM (2)
V
FM (3)
I
RRM
t
rr
t
fr
Test Condition
I
FM
=
0.1 A (pulse test)
I
FM
=
1.0 A (pulse test)
I
FM
=
2.0 A (pulse test)
V
RRM
=
400 V (pulse test)
I
F
=
1 A, di/dt =
−30
A/μs
I
F
=
1.0 A
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
Thermal resistance
(junction to lead)
R
th (j-ℓ)
Min
Typ.
0.88
1.3
1.6
Max
1.8
10
35
100
60
μA
ns
ns
V
Unit
135
°C/W
210
16
°C/W
Start of commercial production
1
2002-12
2013-11-01

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号