ES2LD – ES2LJ
Taiwan Semiconductor
2A, 200V - 600V Surface Mount Super Fast Rectifier
FEATURES
● Glass passivated junction chip
● Ideal for automated placement
● Super fast recovery time for high efficiency
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
VALUE
2
200 - 600
50
150
UNIT
A
V
A
°C
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer,
automotive and telecommunication.
Package
Configuration
DO-214AA (SMB)
Single dice
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94 V-0 flammability rating
● Moisture sensitivity level: level 1, per J-STD-020
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.11 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Forward current
Surge peak forward current, 8.3 ms single half sine-
wave superimposed on rated load per diode
Junction temperature
Storage temperature
V
RRM
V
RMS
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL ES2LD
ES2LD
200
140
ES2LG
ES2LG
400
280
2
50
- 55 to +150
- 55 to +150
ES2LJ
ES2LJ
600
420
V
V
A
A
°C
°C
UNIT
1
Version:B1701
ES2LD – ES2LJ
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction to Lead Thermal Resistance
Junction to Ambient Thermal Resistance
Junction to Case Thermal Resistance
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
LIMIT
35
80
25
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on recommended PCB (16mm x 16mm Cu pad test board)
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
ES2LD
Forward voltage
(1)
CONDITIONS
ES2LG
ES2LJ
I
F
= 1A, T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4V
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
SYMBOL
V
F
TYP
-
-
-
-
-
25
20
20
MAX
0.94
1.30
1.70
10
350
-
-
-
35
UNIT
V
V
V
µA
µA
pF
pF
pF
nS
Reverse current @ rated V
R
per diode
(2)
I
R
ES2LD
Junction capacitance
ES2LG
ES2LJ
Reverse recovery time
Notes:
C
J
t
rr
-
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R5
ES2Lx
(Note1, 2)
H
R4
M4
G
PACKING CODE
SUFFIX
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
Notes:
1. "x" defines voltage from 200V (ES2LD) to 600V (ES2LJ)
2. Whole series with green compound (halogen-free)
EXAMPLE
EXAMPLE P/N
ES2LDHR5G
PART NO.
ES2LD
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:B1701
ES2LD – ES2LJ
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
3
AVERAGE FORWARD CURRENT (A)
Fig2. Typical Junction Capacitance
800
ES2LD
ES2LD
CAPACITANCE (pF)
600
2
400
1
Resistive or
inductive load
with heat sink
0
30
60
90
120
150
200
f=1.0MHz
Vsig=50mVp-p
0
0
20
40
60
80
100
LEAD TEMPERATURE (°C)
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
ES2LD
1
INSTANTANEOUS FORWARD CURRENT (A)
10
10
Fig4. Typical Forward Characteristics
10
ES2LD
1
UF1DLW
T
J
=125°C
0.1
T
J
=25°C
0.01
T
J
=25°C
0.01
Pulse width
Pulse width 300μs
1% duty cycle
0.8
0.9
1
1.1
0.8
0.9
1
1.1
0.001
0.1
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.001
10
20
30
40
50
60
70
80
90
100
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
3
Version:B1701
(A)
T
J
=125°C
1
0.1
T
J
=25°C
T
J
=125°C
ES2LD – ES2LJ
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
3
AVERAGE FORWARD CURRENT (A)
Fig2. Typical Junction Capacitance
800
ES2LG
CAPACITANCE (pF)
ES2LG
600
2
400
1
Resistive or
inductive load
with heat sink
0
30
60
90
120
150
LEAD TEMPERATURE (°C)
200
f=1.0MHz
Vsig=50mVp-p
0
0
20
40
60
80
100
REVERSE VOLTAGE (V)
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
Fig4. Typical Forward Characteristics
10
10
10
Fig4. Typical Forward Characteristics
ES2LG
UF1DLW
T
JJ
=125°C
T =125°C
ES2LG
1
T
J
=125°C
0.1
T
J
=25°C
0.01
1
1
T
J
=25°C
0.01
Pulse width
Pulse width 300μs
1% duty cycle
0.4
0.6
0.5
0.6
0.7
0.8
0.9
0.7 0.8 0.9
1
1.1 1.2
FORWARD VOLTAGE (V)
1
1.3
1.1
1.4
1.2
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.001
0.1
0.3
0.4 0.5
4
Version:B1701
(A)
0.1
T
J
=25°C
ES2LD – ES2LJ
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
3
AVERAGE FORWARD CURRENT (A)
800
Fig2. Typical Junction Capacitance
ES2LJ
CAPACITANCE (pF)
600
ES2LJ
2
400
1
Resistive or
inductive load
with heat sink
0
30
60
90
120
150
LEAD TEMPERATURE (°C)
200
f=1.0MHz
Vsig=50mVp-p
0
0
20
40
60
80
100
REVERSE VOLTAGE (V)
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
10
Fig4. Typical Forward Characteristics
ES2LJ
10 10
Fig4. Typical Forward Characteristics
ES2LJ
1
1
UF1DLW
T
J
=125°C
T
J
=125°C
T
J
=125°C
0.1
1
T
J
=25°C
0.01
Pulse width
Pulse width 300μs
1% duty cycle
0.7
0.8
0.9
1
1.1
1.1
1.3
1.5
1.7
0.01
0.001
0.1
0.5
0.3
0.4
0.7
0.5
0.9
0.6
0.001
10
20
30
40
50
60
70
80
90
100
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
5
Version:B1701
(A)
0.1
T
J
=25°C
T
J
=25°C
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