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1SR124-400AT-82

Description
DIODE GEN PURP 400V 1A DO41
CategoryDiscrete semiconductor    diode   
File Size105KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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1SR124-400AT-82 Overview

DIODE GEN PURP 400V 1A DO41

1SR124-400AT-82 Parametric

Parameter NameAttribute value
MakerROHM Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.4 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

1SR124-400AT-82 Related Products

1SR124-400AT-82 1SR124-400AT-81
Description DIODE GEN PURP 400V 1A DO41 DIODE GEN PURP 400V 1A DO41
Maker ROHM Semiconductor ROHM Semiconductor
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Is Samacsys N N
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-41 DO-41
JESD-30 code O-LALF-W2 O-LALF-W2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Maximum output current 1 A 1 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 400 V
Maximum reverse recovery time 0.4 µs 0.4 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Base Number Matches 1 1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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