DIODE GEN PURP 400V 1A DO41
Parameter Name | Attribute value |
Maker | ROHM Semiconductor |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Is Samacsys | N |
Other features | HIGH RELIABILITY |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JEDEC-95 code | DO-41 |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Maximum output current | 1 A |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 400 V |
Maximum reverse recovery time | 0.4 µs |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |
Base Number Matches | 1 |
1SR124-400AT-82 | 1SR124-400AT-81 | |
---|---|---|
Description | DIODE GEN PURP 400V 1A DO41 | DIODE GEN PURP 400V 1A DO41 |
Maker | ROHM Semiconductor | ROHM Semiconductor |
Reach Compliance Code | unknown | unknown |
ECCN code | EAR99 | EAR99 |
Is Samacsys | N | N |
Other features | HIGH RELIABILITY | HIGH RELIABILITY |
Shell connection | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE |
JEDEC-95 code | DO-41 | DO-41 |
JESD-30 code | O-LALF-W2 | O-LALF-W2 |
Number of components | 1 | 1 |
Number of terminals | 2 | 2 |
Maximum operating temperature | 150 °C | 150 °C |
Maximum output current | 1 A | 1 A |
Package body material | GLASS | GLASS |
Package shape | ROUND | ROUND |
Package form | LONG FORM | LONG FORM |
Certification status | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 400 V | 400 V |
Maximum reverse recovery time | 0.4 µs | 0.4 µs |
surface mount | NO | NO |
Terminal form | WIRE | WIRE |
Terminal location | AXIAL | AXIAL |
Base Number Matches | 1 | 1 |