1SV217 datasheet, PDF - EEWORLD Datasheet

1SV217: Description36 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE; CategoryDiscrete semiconductor diode; File Size113KB，2 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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1SV217 Overview

36 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	SOD
package instruction	R-PDSO-G2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
Minimum breakdown voltage	30 V
Configuration	SINGLE
Diode Capacitance Tolerance	8.33%
Minimum diode capacitance ratio	11.5
Nominal diode capacitance	36 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PDSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	35 V
Maximum reverse current	0.01 µA
Reverse test voltage	28 V
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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