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RM 1BV

Description
DIODE GEN PURP 800V 800MA AXIAL
Categorysemiconductor    Discrete semiconductor   
File Size305KB,9 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
Download Datasheet Parametric View All

RM 1BV Overview

DIODE GEN PURP 800V 800MA AXIAL

RM 1BV Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)800V
Current - average rectification (Io)800mA
Voltage at different If - Forward (Vf1.2V @ 1A
speedStandard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current5µA @ 800V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingAxial
Supplier device packagingAxial
Operating Temperature - Junction-40°C ~ 150°C

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