UNISONIC TECHNOLOGIES CO., LTD
2SB649/A
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC
2SB669/A
PNP SILICON TRANSISTOR
1
SOT-89
1
TO-126
1
TO-126C
1
TO-92
*Pb-free plating product number:
2SB649L/2SB649AL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SB649-x-AB3-R
2SB649L-x-AB3-R
2SB649-x-T6C-K
2SB649L-x-T6C-K
2SB649-x-T60-K
2SB649L-x-T60-K
2SB649-x-T92-B
2SB649L-x-T92-B
2SB649-x-T92-K
2SB649L-x-T92-K
2SB649A-x-AB3-R
2SB649AL-x-AB3-R
2SB649A-x-T6C-K
2SB649AL-x-T6C-K
2SB649A-x-T60-K
2SB649AL-x-T60-K
2SB649A-x-T92-B
2SB649AL-x-T92-B
2SB649A-x-T92-K
2SB649AL-x-T92-K
Package
SOT-89
TO-126C
TO-126
TO-92
TO-92
SOT-89
TO-126C
TO-126
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Bulk
Bulk
Tape Box
Bulk
2SB649L-x-AB3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, T6C: TO-126C, T60: TO-126,
T 92: TO-92
(3) x: refer to Classification of h
FE
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R204-006,D
2SB649/A
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
TO-126/TO-126C
TO-92
SOT-89
2SB649
2SB649A
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
l
C(PEAK)
P
D
T
J
T
STG
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25
℃
, unless otherwise specified)
RATING
-180
-120
-160
-5
-1.5
-3
1.4
1
500
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
W
mW
°
C
°
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Base Breakdown Voltage
BV
CBO
I
C
=-1mA, I
E
=0
Collector to Emitter Breakdown 2SB649
BV
CEO
I
C
=-10mA, R
BE
=
∞
Voltage
2SB649A
Emitter to Base Breakdown Voltage
BV
EBO
I
E
=-1mA, I
C
=0
Collector Cut-off Current
I
CBO
V
CB
=-160V, I
E
=0
h
FE1
V
CE
=-5V, I
C
=-150mA (note)
2SB649
h
FE2
V
CE
=-5V, I
C
=-500mA (note)
DC Current Gain
h
FE1
V
CE
=-5V, I
C
=-150mA (note)
2SB649A
h
FE2
V
CE
=-5V, I
C
=-500mA (note)
Collector-Emitter Saturation Voltage
V
CE(SAT)
Ic=-600mA, I
B
=-50mA
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-150mA
Current Gain Bandwidth Product
f
T
V
CE
=-5V,I
C
=-150mA
Output Capacitance
Cob
V
CB
=-10V, I
E
=0, f=1MHz
Note: Pulse test.
MIN
-180
-120
-160
-5
60
30
60
30
TYP
MAX UNIT
V
V
V
µ
A
-10
320
200
-1
-1.5
140
27
V
V
MHz
pF
CLASSIFICATION OF h
FE
RANK
RANGE
B
60-120
C
100-200
D
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R204-006,D
2SB649/A
TYPICAL CHARACTERISTICS
Typical Output Characteristecs
.5
PNP SILICON TRANSISTOR
Typical Transfer Characteristics
-500
Collector Current, I
C
(mA)
V
CE
=-5V
-100
T a=7
5
℃
1.0
Collector Current, I
C
(A)
0.8
0.6
0.4
0.2
0
- 4.
5
- 3 . .0
-3
5
-2.
-4
. 5- 5
.0
-
5
T
C
=25℃
0W
=2
P
D
-2.0
-1.5
-1.0
-10
-0.5mA
I
B
=0
0
-10
-20
-30
-40
-50
-1
0
Collector to Emitter Voltage, V
CE
(V)
-0.2
-0.4
-0.6
-0.8
-1.0
Base to Emitter Voltage, V
BE
(V)
350
DC Current Transfer Ratio, h
FE
DC Current Transfer Ratio
vs. Collector Current
-1.2
Collector to Emitter Saturation
Voltage, V
CE(SAT)
(V)
Collector to Emitter Saturation Voltage
vs. Collector Current
I
C
=10 I
B
-1.0
-0.8
-0.6
-0.4
-0.2
0
T
5
℃
=7
C
25
300
250
200
150
100
50
1
-1
V
CE
=-5V
5
℃
Ta=7
25
℃
-25
℃
25
-2 5
-25
-10
-100
-1,000
-1
-10
-100
-1,000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
1.2
Base to Emitter Saturation
Voltage, V
BE(SAT)
(V)
Base to Emitter Saturation Voltage
vs. Collector Current
I
C
=10I
B
25
℃
T
C
=-
25
75
240
Gain Bandwidth Product, f
T
(MHz)
Gain Bandwidth Product
vs. Collector Current
V
CE
=5V
Ta=25℃
1.0
0.8
0.6
0.4
0.2
0
200
160
120
80
40
0
10
1
3
10
30
100 300 1,000
Collector Current, I
C
(mA)
30
100
300
1,000
Collector Current, I
C
(mA)
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www.unisonic.com.tw
3 of 4
QW-R204-006,D
2SB649/A
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
Collector Output Capacitance
vs. Collector to Base Voltage
Area of Safe Operation
-3 I
Cmax
(-13.3V, -1.5A)
-1.0
-0.3
-0.1
-0.03
-0.01
-1
(-40V, -0.5A)
2SB649A
DC Operation (T
C
=25℃)
(-120V, -0.038A)
(-160V,- 0.02A)
2SB649
-3
-10
-30
-100 -300
Collector Output Capacitance, C
ob
(pF)
200
50
20
10
5
2
-1
-3
-10
-30
-100
Collector Current, I
C
(A)
100
f=1MHz
I
E
=0
Collector to Base Voltage, V
CB
(V)
Collector to Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-006,D
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