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DL4007-13

Description
DIODE GEN PURP 1KV 1A MELF
Categorysemiconductor    Discrete semiconductor   
File Size41KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DL4007-13 Overview

DIODE GEN PURP 1KV 1A MELF

DL4007-13 Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)1000V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.1V @ 1A
speedStandard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current5µA @ 1000V
Capacitance at different Vr, F15pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-213AB,MELF
Supplier device packagingMELF
Operating Temperature - Junction-55°C ~ 150°C
DL4001 - DL4007
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Junction
High Current Capability
Low Forward Voltage Drop
High Reliability and Low Leakage
For Surface Mount Application
Plastic Material - UL Flammability
Classification Rating 94V-0
A
B
C
Mechanical Data
·
·
·
·
·
Case: MELF, Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode band
Approx Weight: 0.25 grams
Mounting Position: Any
Dim
A
B
C
MELF
Min
4.80
2.40
Max
5.20
2.60
0.55 Nominal
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DL
4001
50
35
DL
4002
100
71
DL
4003
200
141
DL
4004
400
283
1.0
30
1.1
5.0
50
50
15
-55 to +150
DL
4005
600
424
DL
4006
800
566
DL
4007
1000
707
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum Average Forward Rectified
Current @ Terminal Temp
@ T
T
= 75°C
Peak Forward Surge Current 8.3ms single half sine-wave
Superimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage
Maximum dc Reverse Current
Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
F
I
R
R
qJA
C
j
T
j,
T
STG
Unit
V
V
A
A
V
mA
K/W
pF
°C
Typical Thermal Resistance, Junction to Ambient Air
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0 volts.
DS16001 Rev. D-2
1 of 2
www.diodes.com
DL4001-DL4007
ã
Diodes Incorporated

DL4007-13 Related Products

DL4007-13 DL4001_1 DL4007 DL4002-13-F DL4003-13-F DL4001 DL4002-13 DL4001-13-F DL4004-13-F
Description DIODE GEN PURP 1KV 1A MELF 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE DIODE GEN PURP 100V 1A MELF DC reverse withstand voltage (Vr): 50V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V @ 1A DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V @ 1A 400V, 1A, VF=1.1V@1A, rectifier diode

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