DL4002-13-F datasheet, PDF - EEWORLD Datasheet

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DL4002-13-F: Description1 A, 100 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size41KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DL4002-13-F Overview

1 A, 100 V, SILICON, SIGNAL DIODE

DL4002-13-F Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	ROHS COMPLIANT, PLASTIC, MELF-2
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	ROUND
Package Size	LONG FORM
surface mount	Yes
Terminal form	WRAP AROUND
terminal coating	MATTE TIN
Terminal location	END
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	ISOLATED
Diode component materials	SILICON
Diode type	SIGNAL DIODE
Maximum repetitive peak reverse voltage	100 V
Maximum average forward current	1 A

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DL4001 - DL4007

1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

Features

·

Glass Passivated Junction

High Current Capability

Low Forward Voltage Drop

High Reliability and Low Leakage

For Surface Mount Application

Plastic Material - UL Flammability

Classification Rating 94V-0

A

B

C

Mechanical Data

·

Case: MELF, Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: Cathode band

Approx Weight: 0.25 grams

Mounting Position: Any

Dim

A

B

C

MELF

Min

4.80

2.40

Max

5.20

2.60

0.55 Nominal

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

@ T

A

= 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

DL

4001

50

35

DL

4002

100

71

DL

4003

200

141

DL

4004

400

283

1.0

30

1.1

5.0

50

15

-55 to +150

DL

4005

600

424

DL

4006

800

566

DL

4007

1000

707

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Maximum Average Forward Rectified

Current @ Terminal Temp

@ T

T

= 75°C

Peak Forward Surge Current 8.3ms single half sine-wave

Superimposed on Rated Load (JEDEC Method)

Maximum Forward Voltage

Maximum dc Reverse Current

Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Operating and Storage Temperature Range

@ I

F

= 1.0A

@ T

A

= 25°C

@ T

A

= 100°C

Symbol

V

RRM

V

RWM

V

R

V

R(RMS)

I

O

I

FSM

V

F

I

R

qJA

C

j

T

j,

T

STG

Unit

V

A

V

mA

K/W

pF

°C

Typical Thermal Resistance, Junction to Ambient Air

Notes:

1. Measured at 1.0MHz and applied reverse voltage of 4.0 volts.

DS16001 Rev. D-2

1 of 2

www.diodes.com

DL4001-DL4007

ã

Diodes Incorporated

DL4002-13-F Related Products

	DL4002-13-F	DL4001_1	DL4007	DL4003-13-F	DL4001	DL4002-13	DL4007-13	DL4001-13-F	DL4004-13-F
Description	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, SILICON, SIGNAL DIODE	1 A, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	DIODE GEN PURP 100V 1A MELF	DIODE GEN PURP 1KV 1A MELF	DC reverse withstand voltage (Vr): 50V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V @ 1A	DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V @ 1A 400V, 1A, VF=1.1V@1A, rectifier diode

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