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AS01V1

Description
DIODE GEN PURP 400V 600MA AXIAL
CategoryDiscrete semiconductor    diode   
File Size191KB,3 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

AS01V1 Overview

DIODE GEN PURP 400V 600MA AXIAL

AS01V1 Parametric

Parameter NameAttribute value
MakerSANKEN
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum output current0.6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum reverse recovery time1.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
SANKEN ELECTRIC CO., LTD.
ES01A
Scope
The present specifications shall apply to Sanken silicon diode, ES01A.
Outline
Type
Structure
Applications
Silicon Rectifier Diode (Mesa type)
Resin Molded
Pulse Rectification, etc
Flammability
UL94V-0 (Equivalent)
Absolute maximum ratings
No.
1
2
3
4
5
6
Item
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
V
RSM
V
RM
I
F(AV)
I
FSM
T
j
T
stg
Unit
V
V
A
A
°C
°C
Rating
650
600
0.7
20
-40 to +150
-40 to +150
Refer to derating curve
in Section 7
50Hz. Half-Sinewave,
one shot
Conditions
Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
1
2
3
Item
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current Under
High Temperature
Symbo
l
V
F
I
R
H½I
R
trr1
4
Reverse Recovery Time
trr2
5
Thermal Resistance
µs
0. 6 max.
20 max.
Unit
V
µA
µA
µs
Rating
3.0 max.
10 max.
200 max.
1. 5 max.
I
F
=0.8A
V
R
=V
RM
V
R
=V
RM
, Ta=100°C
@ IF=IRP=10mA
90% Recovery point
@ IF=10mA, IRP=20mA,
75% Recovery point
Between Junction and Lead
Conditions
Rth (j-l) °C/W
050707
1/3
61426-01

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