EEWORLDEEWORLDEEWORLD

Part Number

Search

RL106FTA

Description
DIODE GEN PURP 800V 1A A-405
Categorysemiconductor    Discrete semiconductor   
File Size378KB,4 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Environmental Compliance
Download Datasheet Parametric View All

RL106FTA Overview

DIODE GEN PURP 800V 1A A-405

RL106FTA Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)800V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.3V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)500ns
Current at different Vr - Reverse leakage current5µA @ 800V
Capacitance at different Vr, F15pF @ 4V,1MHz
Installation typeThrough hole
Package/casingAxial
Supplier device packagingA-405
Operating Temperature - Junction-65°C ~ 150°C
RL101F-RL107F
Technical Data
Data Sheet N0457, Rev. A
FAST RECOVERY RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed: 260 C/10
seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
RL101F THRU RL107F
A-405
Circuit Diagram
Mechanical Data
Case: A-405 molded plastic body
Terminals: Plated axial leads, solderable per MIL-
STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.008 ounce, 0.23 grams
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75℃
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current T
A
=25
at rated DC blocking voltage T
A
=100
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Junction Temperature
Storage Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
C
J
R
θJA
T
J
T
STG
150
15.0
50.0
RL
101F
50
35
50
RL
102F
100
70
100
RL
103F
200
140
200
RL
104F
400
280
400
1.0
30
1.3
5.0
50.0
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
RL
105F
600
420
600
RL
106F
800
560
800
RL
107F
1000
700
1000
Units
V
V
V
A
A
V
µA
250
500
ns
pF
°C/W
°C
°C
-65 to +150
-65 to +150
Note: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length, P.C.B. mounted
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号