HYS 72Vxx5/6x0GR-7.5
Low Profile PC133 Registered SDRAM-Modules
3.3 V Low Profile 168-pin PC133 Registered
SDRAM Modules for 1U Server Applications
PC133 128 MByte Module
PC133 256 MByte module
PC133 512 MByte Module
PC133 1024 MByte Module
• 168-pin Registered 8 Byte Dual-In-Line
SDRAM Module for Workstation and Server
main memory applications with 1,2” inch
(30,40 mm) height
• One bank 16M
×
72, 32M x 72 and 64M
×
72
and two bank 128Mx72 organization
• Optimized for ECC applications with very low
input capacitances
• JEDEC standard Synchronous DRAMs
(SDRAM) with 128Mb, 256Mb and
512Mb memory density. Stacked
components for two bank modules
• Single + 3.3 V (
±
0.3 V) power supply
• Auto Refresh (CBR) and Self Refresh
• Serial Presence Detect with E
2
PROM
• Programmable CAS Latency, Burst Length,
and Wrap Sequence (Sequential &
Interleave)
• All inputs and outputs are LVTTL compatible
• Utilizes SDRAMs in TSOPII-54 packages
with on-board registers and PLL.
• Card Sizes :
RawCard “F” and “G” 133.35 mm x 30,40 with
gold contact pads
• These modules all fully compatible with the
current industry standard PC133
specifications and fully backward compatible
to PC100 applications
• Performance:
-7.5
f
CK3
t
AC3
f
CK2
t
AC2
Unit
MHz
ns
MHz
ns
Clock Frequency (max.) @ CL = 3
Clock Access Time (min.)@ CL = 3
Clock Frequency (max.) @ CL = 2
Clock Access Time (min.)@ CL = 2
133
5.4
100
6
The HYS 72Vxx5/6x0GR-7.5 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs)
organized as 16M
×
72, 32M x 72, 64M
×
72 and 128M x 72 high speed memory arrays designed with x4 or x8
organised Synchronous DRAMs (SDRAMs) for ECC applications. All control and address signals are registered
on-DIMM and the design incorporates a PLL circuit for the Clock inputs. Use of an on-board register reduces
capacitive loading on the input signals but are delayed by one cycle in arriving at the SDRAM devices. Decoupling
capacitors are mounted on the PC board. The DIMMs use a serial presence detects scheme implemented via a
serial E
2
PROM using the 2-pin I
2
C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the
second 128 bytes are available to the end user. All Infineon 168-pin DIMMs provide a high performance, flexible
8-byte interface in a 133.35 mm long footprint. This module family is designed with 30,40 mm (1.2 inch) maximum
height for 1U Server Applications b ased on JEDEC standard RawCards “F” and “G”.
INFINEON Technologies
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HYS 72Vxx5/6x0GR-7.5
Low Profile PC133 Registered SDRAM-Modules
Ordering Information
Type
1.2” height:
HYS 72V16600GR-7.5
HYS 72V32501GR-7.5
HYS 72V32600GR-7.5
HYS 72V64500GR-7.5
HYS 72V64601GR-7.5
PC133R-333-542-F
PC133R-333-542-G
PC133R-333-542-F
PC133R-333-542-G
PC133R-333-542-F
one bank 128 MB Reg. DIMM
one bank 256 MB Reg. DIMM
one bank 256 MB Reg. DIMM
one bank 512 MB Reg. DIMM
one bank 512 MB Reg. DIMM
two banks 1024 MB Reg.
DIMM
128 MBit (x8)
128 MBit (x4)
256 Mbit (x8)
256 Mbit (x4)
512 MBit (x8)
256 Mbit (x4)
stacked
Compliance Code
Description
SDRAM
Technology
HYS 72V128520GR-7.5 PC133R-333-542-G
Note:
All part numbers end with a place code (not shown), designating the die revision. Consult factory for
current revision. Example: HYS 64V16600GR-7.5-C2, indicating Rev.C2 dies are used for SDRAM
components.
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HYS 72Vxx5/6x0GR-7.5
Low Profile PC133 Registered SDRAM-Modules
Pin Definitions and Functions
A0 - A11, A12 Address Inputs
(A12 is used for 256Mbit and 512Mbit
based modules only)
DQMB0 - DQMB7 Data Mask
BA0, BA1
DQ0 - DQ63
Bank Selects
Data Input/Output
CS0 - CS3
REGE *)
Chip Select
Register Enable
“H” or N.C = registered mode
“L” = buffered mode
CB0 - CB7
RAS
CAS
WE
CKE0
Check Bits
Row Address Strobe
Column Address Strobe
Read/Write Input
Clock Enable
V
DD
V
SS
SCL
SDA
N.C.
–
Power (+ 3.3 V)
Ground
Clock for Presence Detect
Serial Data Out
No Connection
–
CLK0 - CLK3 Clock Input
*) note : To confirm to this specification, motherboards must pull this pin to high state or no connect.
Address Format
Density Organization Memory SDRAMs
Banks
128 MB 16M
×
72
256 MB 32M x 72
256 MB 32M x 72
512 MB 64M
×
72
512 MB 64M
×
72
1 GB
128M x 72
1
1
1
1
1
2
16M x 8
32M x 4
32M x 8
64M
×
4
64M
×
8
64M
×
4
# of
# of row/bank/ Refresh Period Interval
SDRAMs columns bits
9
18
9
18
9
36
12/2/10
12/2/11
13/2/10
13/2/11
13/2/12
13/2/11
4k
4k
8k
8k
8k
8k
64 ms 15.6
µ
s
64 ms 15.6
µ
s
64 ms 7.8
µ
s
64 ms 7.8
µ
s
64 ms 7.8
µ
s
64 ms 7.8
µ
s
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HYS 72Vxx5/6x0GR-7.5
Low Profile PC133 Registered SDRAM-Modules
RCS0
RDQMB0
DQ0-DQ7
CS
DQM
DQ0-DQ7
D0
CS
DQM
DQ0-DQ7
D1
CS WE
DQM
DQ0-DQ7
D8
RDQMB4
DQ32-DQ39
CS
DQM
DQ0-DQ7
D4
CS
DQM
DQ0-DQ7
D5
RDQMB1
DQ8-DQ15
RDQMB5
DQ40-DQ47
RCB0-RCB7
RCS2
RDQMB2
DQ16-DQ23
CS
DQM
DQ0-DQ7
D2
CS
DQM
DQ0-DQ7
D3
RDQMB4
DQ48-DQ55
CS
DQM
DQ0-DQ7
D6
CS
DQM
DQ0-DQ7
D7
E
2
PROM
(256 word x 8 Bit)
SA0
SA0
SA1
SA1 SDA
SA2
SA2
WP
SCL
SCL
RDQMB3
DQ24-DQ31
RDQMB7
DQ56-DQ63
V
C C
C
V
S S
D0-D8, Reg., DLL
D0-D8, Reg., DLL
47 k
Ω
CLK0
12 pF
CS0/CS2
DQMB0-7
BA0, BA1
A0-A11,12*
)
RAS
CAS
CKE0
WE
REGE
10 k
Ω
V
C C
PLL
SDRAMs D0-D8
RCS0/RCS2
RDQMB0-7
RBA0, RBA1
RA0-11,12
RRAS
RCAS
RCKE0
RWE
Notes:
DQ wirding may differ from that
decribed in this drawing;
however DQ/DQB relationship
must be maintained as shown
2)
All resistors are 10
Ω
unless
otherwise noted
*
)
A12 is only for 32 M x 72 & 64Mx72
organisation
1)
SDRAMs
SDRAMs
SDRAMs
SDRAMs
SDRAMs
SDRAMs
D0-D8
D0-D8
D0-D8
D0-D8
D0-D8
D0-D8
Register
CLK1, CLK2, CLK3
12 pF
reg_1U_1
Block Diagram: One Bank 16M x72, 32M x 72 and 64M
×
72 Modules
HYS72V16600, HYS72V32600 & HYS72V64601GR using x8 organized SDRAMs (RawCard F)
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