NTE11 (NPN) & NTE12 (PNP)
Silicon Complementary Transistors
High Current Amplifier
Description:
The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case de-
signed for use in low–frequency output amplifier, DC converter, and strobe applications.
Features:
D
High Collector Current: I
C
= 5A Max
D
Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27V
Collector–Emitter Voltage, V
CEO
NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
NTE11
NTE12
Symbol
I
CBO
V
CB
= 10V, I
E
= 0
V
CB
= 10V, I
E
= 0
–
–
–
–
0.1
100
Test Conditions
Min
Typ Max Unit
µA
nA
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
Emitter Cutoff Current
NTE11
NTE12
Collector–Emitter Voltage
NTE11
NTE12
Emitter–Base Voltage
DC Current Gain
NTE11
NTE12
NTE11 Only
Collector–Emitter Saturation Voltage
NTE11
NTE12
Transition Frequency
NTE11
NTE12
Collector Output Capacitance
NTE11
NTE12
C
ob
V
CB
= 20V, I
E
= 0, f = 1MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
–
–
–
60
50
–
pF
pF
f
T
V
CB
= 6V, I
E
= 50mA, f = 200MHz
V
CB
= 6V, I
E
= 50mA, f = 200MHz
–
–
150
120
–
–
MHz
MHz
h
FE2
V
CE(sat)
I
C
= 3A, I
B
= 100mA, Note 1
I
C
= 3A, I
B
= 100mA, Note 1
–
–
–
0.4
1
1.0
V
V
V
EBO
h
FE1
V
CE
= 2V, I
C
= 500mA, Note 1
V
CE
= 2V, I
C
= 2A, Note 1
V
CE
= 2V, I
C
= 2A, Note 1
340
180
150
–
–
–
600
625
–
V
CEO
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
20
18
7
–
–
–
–
–
–
V
V
V
Symbol
I
EBO
V
EB
= 7V, I
C
= 0
V
EB
= 5V, I
C
= 0
–
–
–
–
0.1
1.0
Test Conditions
Min
Typ Max Unit
µA
µA
Note 1. Pulse measurement
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
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