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HYS72V32220GU-7.5

Description
Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, PDMA168
Categorystorage   
File Size136KB,18 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

HYS72V32220GU-7.5 Overview

Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, PDMA168

HYS72V32220GU-7.5 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionDIMM, DIMM168
Reach Compliance Codeunknown
Is SamacsysN
Maximum access time5.4 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-PDMA-N168
memory density2415919104 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of terminals168
word count33554432 words
character code32000000
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX72
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum standby current0.0015 A
Maximum slew rate0.18 mA
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
3.3V 16M x 64/72-Bit 1 BANK SDRAM Module
3.3V 32M x 64/72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
HYS64/72V16300GU
HYS64/72V32220GU
168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications
PC100 & PC133 versions
1 bank 16M x 64, 16M x 72 and 2 bank 132M x 64, 32M x 72 organisation
Optimized for byte-write non-parity (x64) or ECC (x72) applications
JEDEC standard Synchronous DRAMs (SDRAM)
Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification
SDRAM Performance:
-7.5
PC133
f
CK
t
AC
Clock frequency (max.)
Clock access time
133
5.4
-8
PC100
100
6
MHz
ns
Units
Programmed Latencies :
Product Speed
-7.5
-8
PC133
PC100
CL
3
2
tRCD
3
2
tRP
3
2
Single +3.3V(± 0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Utilizes 16M x 8 SDRAMs in TSOPII-54 packages with 4096 refresh cycles every 64 ms
133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads
INFINEON Technologies
1
12.99
8.99

HYS72V32220GU-7.5 Related Products

HYS72V32220GU-7.5 HYS72V16300GU-8 HYS64V16300GU-7.5 HYS64V16300GU-8 HYS72V32220GU-8 HYS64V32220GU-7.5
Description Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, PDMA168 Synchronous DRAM Module, 16MX72, 6ns, CMOS, PDMA168 Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, PDMA168 Synchronous DRAM Module, 16MX64, 6ns, CMOS, PDMA168 Synchronous DRAM Module, 32MX72, 6ns, CMOS, PDMA168 Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, PDMA168
Maker Infineon Infineon Infineon Infineon Infineon Infineon
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum access time 5.4 ns 6 ns 5.4 ns 6 ns 6 ns 5.4 ns
Maximum clock frequency (fCLK) 133 MHz 100 MHz 133 MHz 100 MHz 100 MHz 133 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDMA-N168 R-PDMA-N168 R-PDMA-N168 R-PDMA-N168 R-PDMA-N168 R-PDMA-N168
memory density 2415919104 bit 1207959552 bit 1073741824 bit 1073741824 bit 2415919104 bit 2147483648 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 72 72 64 64 72 64
Number of terminals 168 168 168 168 168 168
word count 33554432 words 16777216 words 16777216 words 16777216 words 33554432 words 33554432 words
character code 32000000 16000000 16000000 16000000 32000000 32000000
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 32MX72 16MX72 16MX64 16MX64 32MX72 32MX64
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168 DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096 4096 4096
Maximum standby current 0.0015 A 0.0015 A 0.0015 A 0.0015 A 0.0015 A 0.0015 A
Maximum slew rate 0.18 mA 0.17 mA 0.18 mA 0.17 mA 0.17 mA 0.18 mA
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL

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