Bipolar High fT Low Voltage
NPN Silicon Transistors
Features
•
Designed for 3-5 Volt Operation
•
Useable to 6 GHz in Oscillators
•
Useable for Low Noise, Low Voltage Driver Amplifiers
Through 3 GHz
•
Useful for Class C Amplifiers
•
Available as Chips and in Hermetic and Surface
Mount Packages
•
Can be Screened to JANTX, JANTXV Equivalent Levels
(ceramic pacakges)
•
Tape and Reel Packaging Available for packaged
devices.
MP4T3243 Series
V4.00
Case Style
SOT-23
Description
The MP4T3243 series of high f
T
low voltage NPN medium
power silicon bipolar transistors is designed for usage in
battery operated systems with 3-5 volt collector bias. They
are useful as low phase noise oscillator transistors through 6
GHz and as moderate power driver amplifiers through 3
GHz.
These transistors are available as chips for hybrid oscillators
or in ceramic packages for military or commercial usage.
Both the chips and hermetic packages can be screened to
JANTX equivalent levels.
These transistors use high temperature gold, platinum,
titanium metalization with silicon dioxide and silicon nitride
passivation. The chip is emitter ballasted with polysilicon
resistors to prevent current concentration at high current
operation.
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors
Maximum Ratings
MP4T324300
Parameter
Collector-Base Voltage
Emitter-Base Voltage
1
Collector Current
1
Junction Temperature
Storage Temperature
Power Dissipation
1.
2.
3.
1,3
1
MP4T3243 Series
V4.00
MP4T324333
SOT-23
8
6
1.5
110
125
-65 to +125°
C
250
125
MP4T324335
Micro-X
8
6
1.5
110
200
-65 to +175°
C
400
150
Symbol
V
CBO
V
CE
V
EB
I
C
T
j
T
STG
P
T
T
CP
Unit
Volts
Volts
Volts
mA
°
C
°
C
mW
°
C
Chip
8
6
1.5
110
200
-65 to +175°
C
600
150
Collector-Emitter Voltage
1
Operating Temperature
2
At 25° case temperature (packaged transistors) or 25° mounting surface temperature (chip transistors).
C
C
Case or bonding surface temperature. Derate maximum power dissipation rating linearly to zero watts at maximum operating temperature.
The thermal resistance of the MP4T324300 junction/case is 50°
C/watt nominal.
Electrical Specifications @ +25°
C
MP4T324300
Parameter
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 3 volts
I
C
= 50 mA
V
CE
= 3 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
Noise Figure
V
CE
= 3 volts
I
C
= 10 mA
f = 1 GHz
Unilateral Gain
V
CE
= 3 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
Maximum Available Gain
V
CE
= 3 volts
I
C
= 40 mA
f = 2 GHz
Power Out at 1 dB
Compression
V
CE
= 3 volts
I
C
= 50 mA
f = 2 GHz
f = 3 GHz
20 typ
15 typ
19 typ
15 typ
20 typ
15 typ
P
1dB
dBm
8.5 typ
7 typ
8.5 typ
MAG
dB
10 typ
6 typ
9 typ
4 typ
10 typ
6 typ
GTU (max)
dB
2.2 max
2.4 max
2.2 max
NF
dB
7 min
3 typ
6 min
2.5 typ
7 min
3 typ
|S
21E
|
2
dB
Symbol
f
T
Units
GHz
Chip
6 typ
MP4T324333
SOT-23
6 typ
MP4T324335
Micro-X
6 typ
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors
Electrical Specifications @ +25°
C
MP4T3243 Series
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Collector Base
Junction Capacitance
Condition
V
CB
= 4 volts
I
E
= 0
µA
V
EB
= 1 volt
I
C
= 0
µA
V
CE
= 3 volts
I
C
= 20 mA
V
CB
= 3 volts
I
E
= 0
µA
f = 1 MHz
C
OB
0.8
h
FE
20
125
I
EBO
Symbol
I
CBO
Min
Typical
MP4T3243 Series
V4.00
Max
10
1
250
1.0
Units
µA
µA
pF
Typical Scattering Parameters in the MIcro-X Package
MP4T324335
V
CE
= 3 Volts, I
C
= 10 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
Mag.
0.647
0.666
0.694
0.714
0.748
0.772
S11E
Angle
172
149
128
109
90
70
Mag.
2.480
1.408
1.135
1.005
0.948
0.930
S21E
Angle
73.2
51.2
34.1
17.3
4.0
-9.1
Mag.
0.137
0.225
0.336
0.427
0.507
0.605
S12E
Angle
51.4
49.0
43.8
32.1
22.8
11.8
Mag
0.311
0.365
0.366
0.412
0.453
0.499
S22E
Angle
-165.8
172.5
156.0
142.1
127.2
111.9
MP4T324335
V
CE
= 3 Volts, I
C
= 20 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
Mag.
0.661
0.677
0.697
0.715
0.744
0.762
S11E
Angle
168
146
125
107
89
69
Mag.
2.632
1.493
1.210
1.067
1.007
0.990
S21E
Angle
73.3
53.1
36.5
19.3
5.4
-8.5
Mag.
0.137
0.238
0.359
0.451
0.525
0.619
S12E
Angle
60.8
53.0
44.8
31.0
20.7
9.1
Mag
0.373
0.421
0.415
0.450
0.480
0.510
S22E
Angle
178.5
161.3
144.6
130.3
115.5
101.6
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors
Typical Scattering Parameters in the Micro-X Package (Cont’
d)
MP4T324335
V
CE
= 3 Volts, I
C
= 40 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
Mag.
0.675
0.692
0.707
0.719
0.749
0.763
S11E
Angle
164
143
121
104
86
66
Mag.
2.678
1.528
1.230
1.095
1.035
1.017
S21E
Angle
73.3
54.1
37.7
20.8
6.5
-7.8
Mag.
0.139
0.244
0.368
0.463
0.537
0.629
S12E
Angle
66.2
55.0
45.9
31.5
20.4
8.4
MP4T3243 Series
V4.00
S22E
Mag
0.424
0.470
0.455
0.481
0.504
0.523
Angle
176.6
158.6
141.6
128.1
113.3
99.2
MP4T324335
V
CE
= 3 Volts, I
C
= 60 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
Mag.
0.685
0.698
0.719
0.727
0.754
0.767
S11E
Angle
164
143
122
104
86
67
Mag.
2.678
1.528
1.245
1.103
1.045
1.025
S21E
Angle
73.1
54.2
37.7
20.7
6.5
-7.9
Mag.
0.140
0.251
0.380
0.474
0.549
0.641
S12E
Angle
68.1
56.1
45.6
31.0
19.8
7.4
Mag
0.446
0.492
0.480
0.502
0.520
0.540
S22E
Angle
173.9
156.8
139.4
125.4
110.6
96.0
Typical Performance Curves
DC SAFE OPERATING RANGE at 25°
c
TOTAL POWER DISSIPATION (mW)
NOMINAL POWER DERATING CURVES
1000
900
800
700
600
500
400
300
200
100
0
-25
200
COLLECTOR CURRENT (mA)
110
100
80
50
MP4T324300 CHIP
ON 25° HEAT SINK
C
MP4T324300 CHIP
ON 25° HEAT SINK
C
MP4T324335 MICRO-X
MP4T324335 MICRO-X
20
MP4T324333 SOT-23
10
0
2
4
COLLECTOR EMITTER VOLTAGE (Volts)
6
MP4T324333 SOT-23
0
25
50
75
100
125
150
175
200
AMBIENT TEMP (C)
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors
Typical Performance Curves (Cont’
d)
NOMINAL COLLECTOR-BASE
CAPACITANCE (C
OB
) vs COLLECTOR-
BASE VOLTAGE (MP4T324335)
COLLECTOR-BASE CAPACITANCE
(pF)
1
0.9
0.8
0.7
0.6
2
0
1
1
COLLECTOR-BASE VOLTAGE (Volts)
10
0.5
0.4
GAIN (dB)
MP4T3243 Series
V4.00
NOMINAL GAIN vs FREQUENCY at V
CE
= 3
VOLTS AND I
C
= 20 mA (MP4T324335)
12
10
8
6
4
GTU (MAX)
|S
21E
|2
10
FREQUENCY (GHz)
NOMINAL GAIN vs COLLECTOR CURRENT
at f=1 GHz and V
CE
= 3 VOLTS
(MP4T324335)
13
12
11
GAIN (dB)
10
9
8
7
6
5
4
1
10
COLLECTOR CURRENT (mA)
100
|S
21E
|2
GTU (MAX)
MAG
NOMINAL GAIN vs COLLECTOR CURRENT
AT f=2 GHz and V
CE
= 3 VOLTS
(MP4T324335)
10
9
8
7
GAIN (dB)
6
5
4
3
2
1
0
1
10
COLLECTOR CURRENT (mA)
100
|S
21E
|2
GTU (MAX)
MAG
NOMINAL GAIN BANDWIDTH PRODUCT
(f
T
) vs COLLECTOR CURRENT at V
CE
= 3
and 5 VOLTS (MP4T324335)
GAIN BANDWIDTH PRODUCT (GHz)
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1
10
COLLECTOR CURRENT (mA)
100
3 VOLTS
5 VOLTS
DC CURRENT GAIN
NOMINAL DC CURRENT GAIN (h
FE
) vs
COLLECTOR CURRENT at V
CE
= 3 VOLTS
(MP4T324335)
120
110
100
90
80
70
60
50
0
20
40
60
80
100
COLLECTOR CURRENT (mA)
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
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