VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.50 V at I
F
= 5 A
Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AC
ITO-220AC
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
VT760
PIN 1
PIN 2
CASE
2
1
VFT760
PIN 1
PIN 2
1
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA
package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
TO-263AB
K
K
TO-262AA
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
A
NC
VBT760
NC
A
K
HEATSINK
A
K
NC
VIT760
NC
A
K
HEATSINK
Case:
TO-220AC,
TO-262AA
ITO-220AC,
TO-263AB
and
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 7.5 A
T
J
max.
Package
Circuit configuration
7.5 A
60 V
100 A
0.60 V
150 °C
TO-220AC, ITO-220AC,
TO-263AB, TO-262AA
Single
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Isolation voltage (ITO-220AB only)
from terminal to heat sink t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
V
AC
T
J
, T
STG
VT760
VFT760
60
7.5
100
65
1.0
1500
-55 to +150
VBT760
VIT760
UNIT
V
A
A
mJ
^fie
A
V
°C
Revision: 16-Mar-18
Document Number: 89130
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CONDITIONS
I
R
= 1.0 mA
I
F
= 5 A
I
F
= 7.5 A
I
F
= 5 A
I
F
= 7.5 A
V
R
= 60 V
T
A
= 25 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R
SYMBOL
V
BR
V
F
TYP.
60 (minimum)
0.58
0.67
0.50
0.60
-
6.6
MAX.
-
-
0.80
-
0.72
700
25
UNIT
V
Instantaneous forward voltage
(1)
V
Reverse current
(2)
μA
p
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JC
VT760
3.5
VFT760
6.5
VBT760
3.5
VIT760
3.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
VT760-E3/4W
VFT760-E3/4W
VBT760-E3/4W
VBT760-E3/8W
VIT760-E3/4W
UNIT WEIGHT (g)
1.87
1.68
1.39
1.39
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Revision: 16-Mar-18
Document Number: 89130
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
9
100
V(B,I)T760
Average Forward Rectified Current (A)
8
7
6
VFT760
5
4
3
2
1
0
0
25
50
75
100
Mounted on Specific Heatsink
Instantaneous Reverse Current (mA)
10
T
A
= 150 °C
T
A
= 125 °C
1
T
A
= 100 °C
0.1
0.01
T
A
= 25 °C
0.001
125
150
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
7
D = 0.5
D = 0.8
10
Transient Thermal Impedance (°C/W)
Junction to Case
Average Power Disspation (W)
6
D = 0.3
5
4
D = 0.1
3
T
2
1
0
0
1
2
3
4
5
6
7
8
9
D = 1.0
D = 0.2
VFT760
V(B,I)T760
D = t
p
/T
t
p
1
0.01
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
T
A
= 150 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
Instantaneous Forward Current (A)
10
T
A
= 125 °C
1
T
A
= 100 °C
0.1
Junction Capacitance (pF)
100
0.01
T
A
= 25 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
Revision: 16-Mar-18
Document Number: 89130
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
DIA.
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
0.635 (16.13)
0.625 (15.87)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 16-Mar-18
Document Number: 89130
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.33 (8.38) MIN.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 16-Mar-18
Document Number: 89130
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
