EM 2AV0 datasheet, PDF - EEWORLD Datasheet

EM 2AV0: DescriptionDIODE GEN PURP 600V 1.2A AXIAL; Categorysemiconductor Discrete semiconductor; File Size304KB，5 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/; Environmental Compliance

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EM 2AV0 Overview

DIODE GEN PURP 600V 1.2A AXIAL

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	600V
Current - average rectification (Io)	1.2A
Voltage at different If - Forward (Vf	920mV @ 1.2A
speed	Standard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current	10µA @ 600V
Capacitance at different Vr, F	-
Installation type	Through hole
Package/casing	Axial
Supplier device packaging	-
Operating Temperature - Junction	-40°C ~ 150°C

	EM 2AV0	EM 2A	EM 2AV1	EM 2AV
Description	DIODE GEN PURP 600V 1.2A AXIAL	DIODE GEN PURP 600V 1.2A AXIAL	DIODE GEN PURP 600V 1.2A AXIAL	DIODE GEN PURP 600V 1.2A AXIAL
Diode type	standard	standard	standard	standard
Voltage - DC Reverse (Vr) (Maximum)	600V	600V	600V	600V
Current - average rectification (Io)	1.2A	1.2A	1.2A	1.2A
Voltage at different If - Forward (Vf	920mV @ 1.2A	920mV @ 1.2A	920mV @ 1.2A	920mV @ 1.2A
speed	Standard recovery >500ns, >200mA (Io)	Standard recovery >500ns, >200mA (Io)	Standard recovery >500ns, >200mA (Io)	Standard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current	10µA @ 600V	10µA @ 600V	10µA @ 600V	10µA @ 600V
Installation type	Through hole	Through hole	Through hole	Through hole
Package/casing	Axial	Axial	Axial	Axial
Operating Temperature - Junction	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C

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