OPB732
PC board mounting (OPB732)
24” (610 mm) 26 AWG wired with mounting tabs (OPB732WZ)
Non-contact infrared switch
Up to 1” or more reflective distance depending on circuitry
OPB732WZ
OPB732
uses an Infrared LED and Phototransistor in a reflective switch configuration. The assembly is offered with either
PCBoard through hole pins (OPB732) or 24” (610 mm), 26 AWG wires (OPB732WZ), and uses an opaque housing to reduce
the sensor’s ambient light sensitivity. The emitter and sensor are protected by a clear window, providing a device that can
operate in a dusty environment. The phototransistor can be configured as a Common Collector or Common Emitter device.
While an object is in the reflective path of the device, light from the LED will be reflected back to the housing irradiating the
surface (base) of the phototransistor. When Infrared light strikes the phototransistor, the transistor becomes forward
biased and is considered to be in the “ON” state, providing an I
C(ON)
current proportional to the light striking the
phototransistor. With the Infrared light from the LED not being reflected to the phototransistor, the phototransistor turns
“OFF,” minimizing the I
C(ON)
current.
Custom electrical, wire and cabling and connectors are
available. Contact your local representative or OPTEK for
more information.
Ordering Information
Part
Number
OPB732
OPB732WZ
LED Peak
Wavelength
850 nm
Lead Length / Spacing
0.150”/ see diagram
24" / 26 AWG Wire
Non-contact reflective object sensor
Assembly line automation
Machine automation
Equipment security
Door sensor
Machine safety
End of travel sensor
RoHS
Storage Temperature
Operating Temperature
Lead Soldering Temperature (1/16” (1.6mm) from case for 5 seconds with soldering iron)
(2)
-40° C to +100° C
-40° C to +85° C
260° C
Forward Current
Peak Forward current (2 μs pulse width, 0.1% Duty Cycle)
Reverse DC Voltage
Power Dissipation
50 mA
1A
3V
100 mW
Collector-Emitter Voltage
Collector DC Current
Power Dissipation
30 V
50 mA
100 mW
V
F
I
R
Forward Voltage
Reverse Current
-
-
-
-
1.8
100
V
μA
I
F
= 20 mA
V
R
= 2 V
I
C
= 100 µA, E
E
= 0 mw/cm
2
V
CE
= 10 V, E
E
= 0 mw/cm
2
V
(BR)CEO
I
CEO
Collector-Emitter Breakdown Voltage
Collector-Emitter Dark Current
Collector-Emitter Saturation Voltage
(4)
On-State Collector Current
(4)
Cross Talk
30
-
-
-
-
100
V
nA
V
CE(SAT)
I
C(ON)
I
CX
-
0.25
-
-
-
-
0.4
-
50
V
mA
µA
I
C
= 250 µA, I
F
= 30 mA , (4)
V
CE
= 1 V, I
F
= 30 mA, (4)
V
CE
= 5 V, I
F
= 30 mA,
No reflective surface
Notes:
(1) All parameters tested using pulse technique.
(2) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(3) Methanol or isopropanol are recommended as cleaning agents. The plastic housing is soluble in chlorinated
hydrocarbons and keytones.
(4) Distance = 1” (from front of package to a 90% diffuse reflective white card)
I
C(ON)
vs Distance
F
=30mA)
I
C(ON)
vs Distance (I
(I
=30mA)
F
1.6
Normalized at 1.00 inches
1.4
1.2
Normalized I
C(ON)
1.0
0.8
0.6
0.4
0.2
0.0
0.00
0.50
1.00
1.50
2.00
2.50
3.00
Distance (inches)
DC—Drive Circuit for LED & Phototransistor
VCC
V
CC
V
- VLED
R = CC
D
ID
RD
Light
RL
V
- VCE
R = CC
L
IL
V
- VLED
R = CC
D
ID
RD
Light
Inverted
Output
Output
RL
V
- VCE
RL = CC
IL
VEE (GND)
VEE (GND)
Pulsed - Driver Circuits for LED
Phototransistor
Pulsed—Drive Circuit for LED &
& Phototransistor
VCC
VCC
V
- VLED - VCE
RD = CC
I
D
RD
Light
RL
V
-V
CE
RL = CC
IL
Inverted
Output
V
-V
-V
LED CE
RD = CC
ID
RD
Light
Drive
Ckt.
Drive
Ckt.
Output
RL
V
-V
RL = CC CE
IL
(GND)
V
EE
VEE (GND)
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