HUFA76407DK8T-F085 datasheet, PDF

HUFA76407DK8T-F085: DescriptionMOSFET 2N-CH 60V 8-SOIC; CategoryDiscrete semiconductor The transistor; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MOSFET 2N-CH 60V 8-SOIC

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G8
Manufacturer packaging code	751EB
Reach Compliance Code	compliant
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	3.8 A
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e4
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2.5 W
Certification status	Not Qualified
Guideline	AEC-Q101
surface mount	YES
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	116 ns
Maximum opening time (tons)	24 ns

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