MOSFET N-CH 700V 8.5A TO251
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 700V |
| Current - Continuous Drain (Id) at 25°C | 8.5A（Tc） |
| Drive voltage (maximum Rds On, minimum Rds On) | 10V |
| Rds On (maximum value) when different Id, Vgs | 600 milliohms @ 1.8A, 10V |
| Vgs (th) (maximum value) when different Id | 3.5V @ 90µA |
| Gate charge (Qg) at different Vgs (maximum value) | 10.5nC @ 10V |
| Vgs (maximum value) | ±16V |
| Input capacitance (Ciss) at different Vds (maximum value) | 364pF @ 400V |
| FET function | - |
| Power dissipation (maximum) | 43W（Tc） |
| Operating temperature | -40°C ~ 150°C（TJ） |
| Installation type | Through hole |
| Supplier device packaging | PG-TO251 |
| Package/casing | TO-251-3 stubbed lead, IPak |
| IPS70R600P7SAKMA1 | IPS70R600P7S | |
|---|---|---|
| Description | MOSFET N-CH 700V 8.5A TO251 | Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: |
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