NVMFS6H801NT1G datasheet, PDF - EEWORLD Datasheet

NVMFS6H801NT1G: DescriptionTRENCH 8 80V NFET; Categorysemiconductor Discrete semiconductor; File Size99KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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TRENCH 8 80V NFET

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	80V
Current - Continuous Drain (Id) at 25°C	23A（Ta），157A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	2.8 milliohms @ 50A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	64nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	4120pF @ 40V
FET function	-
Power dissipation (maximum)	3.8W（Ta），166W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount
Supplier device packaging	5-DFN（5x6）（8-SOFL）
Package/casing	8-PowerTDFN, 5-lead

	NVMFS6H801NT1G	NVMFS6H801NWFT1G
Description	TRENCH 8 80V NFET	MOSFET TRENCH 8 80V NFET

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