d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2.
g. T
C
= 25 °C.
S17-0334-Rev. B, 06-Mar-17
Document Number: 68127
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ926DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +16 V, -12 V
V
DS
= 25 V, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
V
DS
= 10 V, V
GS
= 10 V, f = 1 MHz
Channel-2
V
DS
= 10 V, V
GS
= 10 V, f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 10 V, V
GS
= 10 V, I
D
= 8 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 8 A
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 8 A
V
DS
= 10 V, V
GS
= 0 V
f = 1 MHz
MIN.
25
25
-
-
-
-
1.1
1.1
-
-
-
-
-
-
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.18
0.12
TYP.
-
-
19
15
4.9
4.6
-
-
-
-
-
-
-
-
-
-
0.00380
0.00173
0.00640
0.00265
40
55
925
2150
310
800
52
100
0.056
0.047
12.5
27
5.9
12.5
2.5
5.4
1.2
2.1
5
13
0.92
0.6
MAX.
-
-
-
-
-
-
2.2
2.2
100
100
1
1
10
10
-
-
0.00480
0.00220
0.00790
0.00335
-
-
-
-
-
-
-
-
0.115
0.095
19
41
8.9
19
-
-
-
-
-
-
1.9
1.2
nC
pF
S
A
μA
V
nA
mV/°C
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
Temperature coefficient
V
GS(th)
Temperature coefficient
Gate threshold voltage
Gate source leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
Zero gate voltage drain current
I
DSS
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 8 A
V
GS
= 4.5 V, I
D
= 3 A
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 8 A
On-state drain current
b
I
D(on)
Drain-source on-state resistance
b
R
DS(on)
Forward transconductance
b
Dynamic
a
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
g
fs
C
iss
C
oss
C
rss
Total gate charge
Q
g
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Q
gs
Q
gd
Q
oss
R
g
S17-0334-Rev. B, 06-Mar-17
Document Number: 68127
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ926DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 5 A, V
GS
= 0 V
I
S
= 8 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 5 A, dI/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 8 A, dI/dt = 100 A/μs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
8
10
20
20
12
17
8
8
12
16
47
40
6
13
12
12
-
-
-
-
0.81
0.77
25
20
15
15
13.5
13
11.5
7
MAX.
20
20
40
40
25
35
20
20
25
35
100
80
15
30
25
25
16.8
33.6
100
170
1.2
1.2
50
40
30
30
-
-
-
-
ns
V
ns
nC
A
ns
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current (t = 100 μs)
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0334-Rev. B, 06-Mar-17
Document Number: 68127
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ926DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
80
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
80
10000
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
40
100
20
V
GS
= 3 V
2nd line
I
D
- Drain Current (A)
60
60
1000
40
100
1st line
2nd line
T
C
= 25 °C
T
C
= 125 °C
T
C
= -55 °C
20
0
0
0.5
1
1.5
2
2.5
3
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.015
10000
1200
1000
2nd line
C - Capacitance (pF)
1000
V
GS
= 4.5 V
Axis Title
10000
C
iss
2nd line
R
DS(on)
- On-Resistance (Ω)
0.012
800
600
400
200
C
oss
1000
1st line
2nd line
100
C
rss
0.006
100
0.003
V
GS
= 10 V
1st line
2nd line
0.009
0
0
20
40
I
D
- Drain Current (A)
2nd line
60
80
10
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 5 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.6
I
D
= 5 A
V
GS
= 10 V
10000
8
V
DS
= 10 V
V
DS
= 15 V
V
DS
= 5 V
1.4
1000
1st line
2nd line
100
0.8
10
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
1.2
V
GS
= 4.5 V
1000
1st line
2nd line
6
4
100
2
1.0
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
2nd line
10
0.6
Gate Charge
On-Resistance vs. Junction Temperature
S17-0334-Rev. B, 06-Mar-17
Document Number: 68127
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ926DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.020
I
D
= 5 A
Vishay Siliconix
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
I
S
- Source Current (A)
10
T
J
= 150 °C
T
J
= 25 °C
0.015
1000
0.010
T
J
= 150 °C
1000
1st line
2nd line
1
100
100
0.005
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.2
10000
40
2.0
2nd line
V
GS(th)
(V)
30
Power (W)
1000
1st line
2nd line
1.8
20
1.6
I
D
= 250 μA
100
1.4
10
1.2
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
R
DS(on)
Limited
(1)
10000
I
DM
Limited
100
2nd line
I
D
- Drain Current (A)
I
D(on)
Limited
1000
100 μs
1 ms
10 ms
100 ms
100
1s
10 s
DC
BVDSSLimited
1
0.1
T
A
= 25 °C
Single pulse
0.01
0.01
(1)
10
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-0334-Rev. B, 06-Mar-17
Document Number: 68127
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
[align=left][size=4][color=#000000][backcolor=white]With the introduction of Core Specification Version 5.0, Bluetooth is no longer a wireless protocol for personal area networks (PANs) only. The spec...
For various reasons, I haven't used this for a long time...
But once connected, this problem will easily occurBut from the notification bar, you can see that it is connected normally.Originally... it ...
1. Basic principles and classification of D/A convertersT-type resistor network D/A converter:2. Correspondence between output voltage and digital quantity3. Main performance indicators of D/A convert...
In PCB design, you need to draw pad files. For the two layers of Solder Mask Layers and Paste Mask layers,
Many people don't quite understand this, so let me explain it briefly below.Solder mask: Sold...
The transistor has three working states: cutoff, amplification, and saturation. The amplification state is very knowledgeable and complicated, and is mostly used in integrated chips, such as op amps, ...
The car key has been used for 8 or 9 years and seems to still work. I was very curious and measured it. Why is the standby power consumption so low? How can the MCU sleep current be so low? Is it beca...
Although the two LED lights can flash, it always requires the participation of the CPU. Now try to use a more automated method: let the pulse width modulation (PWM) controller output a square wave wi...[Details]
1. Introduction to the technical innovation of SVAC standards
(1) Support high-precision video data, provide more image details in high dynamic range scenes, and reduce image informati...[Details]
A remote wireless photometry system based on the combination of ZigBee short-distance wireless communication technology and 3G long-distance wireless communication technology is designed; the system p...[Details]
Different from the power supply, the DC electronic load is a device that consumes energy by controlling the internal power or conduction flow of the transistor and relying on the dispersed power of t...[Details]
//CLK_SYSCLKConfig uses the highest bit of the CLK_Prescaler value to distinguish whether it is configuring HSI frequency division or CPU frequency division. This function has two functions. //CLK_...[Details]
0 Introduction
The extensive use of nonlinear, asymmetric, and non-stationary power equipment has brought severe challenges to ensuring the quality of power supply. The power quality problem ...[Details]
Take several ballpoint pen refills that have run out of ink, cut off their ball heads, file them flat, and clean them with gasoline, as shown in Figure 6-19 (a). Then use tin to solder them t...[Details]
China Energy Storage Network:
"Green" is the underlying color of the development of the Yangtze River Delta. The Central Economic Work Conference held at the end of last year more clearly req...[Details]
According to foreign media reports, in order to ensure that self-driving vehicles can cope with a variety of different weather conditions, Waymo has previously begun testing outside of California. Fo...[Details]
Gas detector is an instrument tool for detecting gas leakage concentration. It is generally available in three types: handheld diffusion type, pump suction type and fixed online type. It mainly uses ...[Details]
Introduction ? ESP (Electronic Stability Program) is a landmark invention of automotive electronic control. Different R&D institutions have different names for this system. For example, Bosch (...[Details]
Apple could update its AirPods lineup in early 2021, including new versions of the AirPods and AirPods Pro, and potentially a third HomePod model, a new report says. New reports indicate that the m...[Details]
Currently, iPhone 13 Pro and iPhone 13 Pro Max are available in 1TB versions, priced at 11,999 yuan and 12,999 yuan respectively. On January 17, according to LetsGoDigital, Samsung will also ...[Details]
OFweek Cup · OFweek 2023 China
Robot
Industry Annual Selection (abbreviated as OFweek Robot Awards 2023) is jointly organized by OFweek, China's high-tech industry portal, and its authorita...[Details]
On October 19, 2024, a delegation from the Tian Changlin Center (Optical Valley), led by Tan Binglin, Vice President of the U.S.-China Green Energy Promotion Association (UCGEC), visited the energy...[Details]
Wireless Connectivity
京公网安备 11010802033920号
EEWORLD
