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PDTA114TM,315

Description
TRANS PNP W/RES 50V SOT-883
CategoryDiscrete semiconductor    The transistor   
File Size188KB,12 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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PDTA114TM,315 Overview

TRANS PNP W/RES 50V SOT-883

PDTA114TM,315 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeDFN
package instructionCHIP CARRIER, R-PBCC-N3
Contacts3
Manufacturer packaging codeSOT883
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)200
JESD-30 codeR-PBCC-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

PDTA114TM,315 Related Products

PDTA114TM,315 PDTA114TE,115 PDTA114TU,115 PDTA114TT,215
Description TRANS PNP W/RES 50V SOT-883 PDTA114T series - PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open SC-75 3-Pin TRANS PREBIAS PNP 200MW SOT323 TRANS PREBIAS PNP 250MW TO236AB
Brand Name Nexperia Nexperia Nexperia Nexperia
Maker Nexperia Nexperia Nexperia Nexperia
Parts packaging code DFN SC-75 SC-70 TO-236
package instruction CHIP CARRIER, R-PBCC-N3 PLASTIC, SC-75, 3 PIN SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Manufacturer packaging code SOT883 SOT416 SOT323 SOT23
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 200 200 200 200
JESD-30 code R-PBCC-N3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type PNP PNP PNP PNP
surface mount YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form NO LEAD GULL WING GULL WING GULL WING
Terminal location BOTTOM DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 40 30 30
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is Samacsys - N N N
Base Number Matches - 1 1 1
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