TRANS PREBIAS PNP 200MW SOT323
| Parameter Name | Attribute value |
| Brand Name | Nexperia |
| Maker | Nexperia |
| Parts packaging code | SC-70 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Manufacturer packaging code | SOT323 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Other features | BUILT IN BIAS RESISTOR |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 200 |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | PNP |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| PDTA114TU,115 | PDTA114TE,115 | PDTA114TM,315 | PDTA114TT,215 | |
|---|---|---|---|---|
| Description | TRANS PREBIAS PNP 200MW SOT323 | PDTA114T series - PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open SC-75 3-Pin | TRANS PNP W/RES 50V SOT-883 | TRANS PREBIAS PNP 250MW TO236AB |
| Brand Name | Nexperia | Nexperia | Nexperia | Nexperia |
| Maker | Nexperia | Nexperia | Nexperia | Nexperia |
| Parts packaging code | SC-70 | SC-75 | DFN | TO-236 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | PLASTIC, SC-75, 3 PIN | CHIP CARRIER, R-PBCC-N3 | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 | 3 | 3 | 3 |
| Manufacturer packaging code | SOT323 | SOT416 | SOT883 | SOT23 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 200 | 200 | 200 | 200 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PBCC-N3 | R-PDSO-G3 |
| JESD-609 code | e3 | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | CHIP CARRIER | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| surface mount | YES | YES | YES | YES |
| Terminal surface | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) |
| Terminal form | GULL WING | GULL WING | NO LEAD | GULL WING |
| Terminal location | DUAL | DUAL | BOTTOM | DUAL |
| Maximum time at peak reflow temperature | 30 | 40 | 30 | 30 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Is Samacsys | N | N | - | N |
| Base Number Matches | 1 | 1 | - | 1 |
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