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DMP3007SCG-13

Description
MOSFET P-CH 30V 50A VDFN3333-8
Categorysemiconductor    Discrete semiconductor   
File Size387KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance
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DMP3007SCG-13 Overview

MOSFET P-CH 30V 50A VDFN3333-8

DMP3007SCG-13 Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C50A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs6.8 milliohms @ 11.5A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)64.2nC @ 10V
Vgs (maximum value)±25V
Input capacitance (Ciss) at different Vds (maximum value)2826pF @ 15V
FET function-
Power dissipation (maximum)2.4W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingV-DFN3333-8
Package/casing8-PowerVDFN

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Description MOSFET P-CH 30V 50A VDFN3333-8 Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 50A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 6.8mΩ @ 11.5A, 10V Maximum power Dissipation (Ta=25°C): 2.4W Type: P-channel P-channel, -30V, -50A, 6.8mΩ@-10V
Drain-source voltage (Vdss) 30V 30V
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