MOSFET 2N-CH 30V 8A 8SOIC
Parameter Name | Attribute value |
FET type | 2 N-channel (dual) |
FET function | logic level gate |
Drain-source voltage (Vdss) | 30V |
Current - Continuous Drain (Id) at 25°C | 8A |
Rds On (maximum value) when different Id, Vgs | 20 milliohms @ 8A, 10V |
Vgs (th) (maximum value) when different Id | 2V @ 30µA |
Gate charge (Qg) at different Vgs (maximum value) | 17nC @ 5V |
Input capacitance (Ciss) at different Vds (maximum value) | 870pF @ 25V |
Power - Max | 2W |
Operating temperature | -55°C ~ 150°C(TJ) |
Installation type | surface mount |
Package/casing | 8-SOIC (0.154", 3.90mm wide) |
Supplier device packaging | 8-SO |