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FGA15N120ANDTU

Description
IGBT 1200V 24A 200W TO3P
Categorysemiconductor    Discrete semiconductor   
File Size595KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FGA15N120ANDTU Overview

IGBT 1200V 24A 200W TO3P

FGA15N120ANDTU Parametric

Parameter NameAttribute value
IGBT typeNPT
Voltage - collector-emitter breakdown (maximum)1200V
Current - Collector (Ic) (Maximum)24A
Pulse current - collector (Icm)45A
Vce(on) when different Vge,Ic3.2V @ 15V,15A
Power - Max200W
switching energy3.27mJ (on), 600µJ (off)
input typestandard
gate charge120nC
Td (on/off) value at 25°C90ns/310ns
Test Conditions600V, 15A, 20 Ohm, 15V
Reverse recovery time (trr)330ns
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-3P-3,SC-65-3
Supplier device packagingTO-3PN
FGA15N120AND
IGBT
FGA15N120AND
General Description
Employing NPT technology, Fairchild’s AND series of
IGBTs provides low conduction and switching losses. The
AND series offers solutions for applications such as
induction heating (IH), motor control, general purpose
inverters and uninterruptible power supplies (UPS).
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 2.4 V @ I
C
= 15A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 210ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
G
TO-3PN
G C E
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
FGA15N120AND
1200
±
20
24
15
45
15
45
200
80
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.63
2.88
40
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
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