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SGP40N60UFTU

Description
IGBT 600V 40A 160W TO220
Categorysemiconductor    Discrete semiconductor   
File Size563KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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SGP40N60UFTU Overview

IGBT 600V 40A 160W TO220

SGP40N60UFTU Parametric

Parameter NameAttribute value
IGBT type-
Voltage - collector-emitter breakdown (maximum)600V
Current - Collector (Ic) (Maximum)40A
Pulse current - collector (Icm)160A
Vce(on) when different Vge,Ic2.6V @ 15V,20A
Power - Max160W
switching energy160µJ (on), 200µJ (off)
input typestandard
gate charge97nC
Td (on/off) value at 25°C15ns/65ns
Test Conditions300V, 20A, 10 ohms, 15V
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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