EEWORLDEEWORLDEEWORLD

Part Number

Search

HUFA75333S3ST

Description
MOSFET N-CH 55V 66A D2PAK
Categorysemiconductor    Discrete semiconductor   
File Size232KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

HUFA75333S3ST Overview

MOSFET N-CH 55V 66A D2PAK

HUFA75333S3ST Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)55V
Current - Continuous Drain (Id) at 25°C66A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs16 milliohms @ 66A, 10V
Vgs (th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)85nC @ 20V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1300pF @ 25V
FET function-
Power dissipation (maximum)150W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD²PAK(TO-263AB)
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
HUFA75333G3, HUFA75333P3, HUFA75333S3S
Data Sheet
December 2001
66A, 55V, 0.016 Ohm. N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching convertors, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75333.
Features
• 66A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HUFA75333G3
HUFA75333P3
HUFA75333S3S
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
75333G
75333P
75333S
S
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75333S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B

HUFA75333S3ST Related Products

HUFA75333S3ST HUFA75333P3 HUFA75333S3S
Description MOSFET N-CH 55V 66A D2PAK MOSFET N-CH 55V 66A TO-220AB MOSFET N-CH 55V 66A D2PAK
FET type N channel N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 55V 55V 55V
Current - Continuous Drain (Id) at 25°C 66A(Tc) 66A(Tc) 66A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V 10V 10V
Rds On (maximum value) when different Id, Vgs 16 milliohms @ 66A, 10V 16 milliohms @ 66A, 10V 16 milliohms @ 66A, 10V
Vgs (th) (maximum value) when different Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 85nC @ 20V 85nC @ 20V 85nC @ 20V
Vgs (maximum value) ±20V ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 1300pF @ 25V 1300pF @ 25V 1300pF @ 25V
Power dissipation (maximum) 150W(Tc) 150W(Tc) 150W(Tc)
Operating temperature -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
Installation type surface mount Through hole surface mount
Supplier device packaging D²PAK(TO-263AB) TO-220AB D²PAK(TO-263AB)
Package/casing TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2-lead + tab), TO-263AB
Altium Designer 19.1.6, Reports BOM does not generate the BOM table, and AD19 will be stuck. What is the reason?
[i=s]This post was last edited by oyhprince on 2021-3-27 17:55[/i]Software: Altium Designer, Version 19.1.6 Problem: Whether it is the schematic or PCB interface, Reports Bill of Materials, the AD19 s...
oyhprince PCB Design
[Digi-Key Innovation Design Competition] Material Unboxing + ESP32-S3-BOX
[i=s]This post was last edited by Unseen on 2022-7-2 19:30[/i]The express I had been waiting for finally arrived from the other side of the ocean. I was told that the Espressif ESP32-S3-Korvo-2 develo...
未见 DigiKey Technology Zone
EEWORLD University - Code reuse demonstration using TI SimpleLink? MCU platform
Code reuse demonstration using TI SimpleLink? MCU platform : https://training.eeworld.com.cn/course/5002...
wanglan123 MCU
STM32 RTC registers
It is said that STM32 has a 32-bit second counter, which can be accumulated as long as the battery is sufficient. The device I use is the STM32F4 MCU. Can this 32-bit register be read? Also, the calen...
bigbat stm32/stm8
Inductance calculation formula
[i=s]This post was last edited by Jacktang on 2019-1-5 21:48[/i] [size=4] The inductor line diagram is composed of a wire wound around an insulating tube, and the insulating tube can be hollow or cont...
Jacktang Analogue and Mixed Signal
[NXP Rapid IoT Review] + Recommendation for NXP Rapid IoT to connect the differential ADC input port of KW64 to the expansion port
The introduction of the Rapid IoT prototype on the NXP website is as follows: NXP's Rapid IoT prototyping kit is a comprehensive, secure and power-optimized solution designed to accelerate the prototy...
bjemt RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号