HUFA76429S3ST datasheet, PDF - EEWORLD Datasheet

HUFA76429S3ST: DescriptionMOSFET N-CH 60V 47A D2PAK; Categorysemiconductor Discrete semiconductor; File Size204KB，10 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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MOSFET N-CH 60V 47A D2PAK

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V
Current - Continuous Drain (Id) at 25°C	47A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
Rds On (maximum value) when different Id, Vgs	22 milliohms @ 47A, 10V
Vgs (th) (maximum value) when different Id	3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	46nC @ 10V
Vgs (maximum value)	±16V
Input capacitance (Ciss) at different Vds (maximum value)	1480pF @ 25V
FET function	-
Power dissipation (maximum)	110W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount
Supplier device packaging	D²PAK（TO-263AB）
Package/casing	TO-263-3, D²Pak (2-lead + tab), TO-263AB

	HUFA76429S3ST	HUFA76429P3
Description	MOSFET N-CH 60V 47A D2PAK	MOSFET N-CH 60V 47A TO-220AB
FET type	N channel	N channel
technology	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V	60V
Current - Continuous Drain (Id) at 25°C	47A（Tc）	47A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V	4.5V，10V
Rds On (maximum value) when different Id, Vgs	22 milliohms @ 47A, 10V	22 milliohms @ 47A, 10V
Vgs (th) (maximum value) when different Id	3V @ 250µA	3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	46nC @ 10V	46nC @ 10V
Vgs (maximum value)	±16V	±16V
Input capacitance (Ciss) at different Vds (maximum value)	1480pF @ 25V	1480pF @ 25V
Power dissipation (maximum)	110W（Tc）	110W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）	-55°C ~ 175°C（TJ）
Installation type	surface mount	Through hole
Supplier device packaging	D²PAK（TO-263AB）	TO-220AB
Package/casing	TO-263-3, D²Pak (2-lead + tab), TO-263AB	TO-220-3

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