FQPF19N10L datasheet, PDF - EEWORLD Datasheet

FQPF19N10L: DescriptionMOSFET N-CH 100V 13.6A TO-220F; Categorysemiconductor Discrete semiconductor; File Size614KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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MOSFET N-CH 100V 13.6A TO-220F

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	13.6A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	5V，10V
Rds On (maximum value) when different Id, Vgs	100 milliohms @ 6.8A, 10V
Vgs (th) (maximum value) when different Id	2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	18nC @ 5V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	870pF @ 25V
FET function	-
Power dissipation (maximum)	38W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-220F
Package/casing	TO-220-3 whole package

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